Relation between luminescence and electronic surface characteristics in p-type porous silicon

S. Z. Weisz; A. Ramirez Porras; M. Gomez; A. Many; Y. Goldstein; E. Savir

doi:10.1016/S0022-2313(96)00438-3

Relation between luminescence and electronic surface characteristics in p-type porous silicon

S. Z. Weisz, A. Ramirez Porras, M. Gomez, A. Many, Y. Goldstein^*, E. Savir

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Measurements of photoluminescence, electronic surface states and effective surface area, at various stages of the anodization process, are presented. The results show a behavior different from that observed on n-type porous Si.

Original language	English
Pages (from-to)	729-730
Number of pages	2
Journal	Journal of Luminescence
Volume	72-74
DOIs	https://doi.org/10.1016/S0022-2313(96)00438-3
State	Published - Jun 1997

Keywords

Luminescence
Porous silicon
Surface states

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10.1016/S0022-2313(96)00438-3

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@article{2a33dfedb7ee4ae9b1eafdea96ab5341,

title = "Relation between luminescence and electronic surface characteristics in p-type porous silicon",

abstract = "Measurements of photoluminescence, electronic surface states and effective surface area, at various stages of the anodization process, are presented. The results show a behavior different from that observed on n-type porous Si.",

keywords = "Luminescence, Porous silicon, Surface states",

author = "Weisz, {S. Z.} and {Ramirez Porras}, A. and M. Gomez and A. Many and Y. Goldstein and E. Savir",

year = "1997",

month = jun,

doi = "10.1016/S0022-2313(96)00438-3",

language = "אנגלית",

volume = "72-74",

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journal = "Journal of Luminescence",

issn = "0022-2313",

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T1 - Relation between luminescence and electronic surface characteristics in p-type porous silicon

AU - Weisz, S. Z.

AU - Ramirez Porras, A.

AU - Gomez, M.

AU - Many, A.

AU - Goldstein, Y.

AU - Savir, E.

PY - 1997/6

Y1 - 1997/6

N2 - Measurements of photoluminescence, electronic surface states and effective surface area, at various stages of the anodization process, are presented. The results show a behavior different from that observed on n-type porous Si.

AB - Measurements of photoluminescence, electronic surface states and effective surface area, at various stages of the anodization process, are presented. The results show a behavior different from that observed on n-type porous Si.

KW - Luminescence

KW - Porous silicon

KW - Surface states

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SN - 0022-2313

VL - 72-74

SP - 729

EP - 730

JO - Journal of Luminescence

JF - Journal of Luminescence

ER -

Relation between luminescence and electronic surface characteristics in p-type porous silicon

Abstract

Keywords

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