Replenish and relax: Explaining logarithmic annealing in ion-implanted c-Si

Laurent Karim Béland*, Yonathan Anahory, Dries Smeets, Matthieu Guihard, Peter Brommer, Jean François Joly, Jean Christophe Pothier, Laurent J. Lewis, Normand Mousseau, François Schiettekatte

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

We study ion-damaged crystalline silicon by combining nanocalorimetric experiments with an off-lattice kinetic Monte Carlo simulation to identify the atomistic mechanisms responsible for the structural relaxation over long time scales. We relate the logarithmic relaxation, observed in a number of disordered systems, with heat-release measurements. The microscopic mechanism associated with this logarithmic relaxation can be described as a two-step replenish and relax process. As the system relaxes, it reaches deeper energy states with logarithmically growing barriers that need to be unlocked to replenish the heat-releasing events leading to lower-energy configurations.

Original languageAmerican English
Article number105502
JournalPhysical Review Letters
Volume111
Issue number10
DOIs
StatePublished - 4 Sep 2013
Externally publishedYes

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