Replenish and relax: Explaining logarithmic annealing in ion-implanted c-Si

Laurent Karim Béland; Yonathan Anahory; Dries Smeets; Matthieu Guihard; Peter Brommer; Jean François Joly; Jean Christophe Pothier; Laurent J. Lewis; Normand Mousseau; François Schiettekatte

doi:10.1103/PhysRevLett.111.105502

Replenish and relax: Explaining logarithmic annealing in ion-implanted c-Si

Laurent Karim Béland^*, Yonathan Anahory, Dries Smeets, Matthieu Guihard, Peter Brommer, Jean François Joly, Jean Christophe Pothier, Laurent J. Lewis, Normand Mousseau, François Schiettekatte

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

We study ion-damaged crystalline silicon by combining nanocalorimetric experiments with an off-lattice kinetic Monte Carlo simulation to identify the atomistic mechanisms responsible for the structural relaxation over long time scales. We relate the logarithmic relaxation, observed in a number of disordered systems, with heat-release measurements. The microscopic mechanism associated with this logarithmic relaxation can be described as a two-step replenish and relax process. As the system relaxes, it reaches deeper energy states with logarithmically growing barriers that need to be unlocked to replenish the heat-releasing events leading to lower-energy configurations.

Original language	English
Article number	105502
Journal	Physical Review Letters
Volume	111
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevLett.111.105502
State	Published - 4 Sep 2013
Externally published	Yes

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abstract = "We study ion-damaged crystalline silicon by combining nanocalorimetric experiments with an off-lattice kinetic Monte Carlo simulation to identify the atomistic mechanisms responsible for the structural relaxation over long time scales. We relate the logarithmic relaxation, observed in a number of disordered systems, with heat-release measurements. The microscopic mechanism associated with this logarithmic relaxation can be described as a two-step replenish and relax process. As the system relaxes, it reaches deeper energy states with logarithmically growing barriers that need to be unlocked to replenish the heat-releasing events leading to lower-energy configurations.",

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AU - Béland, Laurent Karim

AU - Anahory, Yonathan

AU - Smeets, Dries

AU - Guihard, Matthieu

AU - Brommer, Peter

AU - Joly, Jean François

AU - Pothier, Jean Christophe

AU - Lewis, Laurent J.

AU - Mousseau, Normand

AU - Schiettekatte, François

PY - 2013/9/4

Y1 - 2013/9/4

N2 - We study ion-damaged crystalline silicon by combining nanocalorimetric experiments with an off-lattice kinetic Monte Carlo simulation to identify the atomistic mechanisms responsible for the structural relaxation over long time scales. We relate the logarithmic relaxation, observed in a number of disordered systems, with heat-release measurements. The microscopic mechanism associated with this logarithmic relaxation can be described as a two-step replenish and relax process. As the system relaxes, it reaches deeper energy states with logarithmically growing barriers that need to be unlocked to replenish the heat-releasing events leading to lower-energy configurations.

AB - We study ion-damaged crystalline silicon by combining nanocalorimetric experiments with an off-lattice kinetic Monte Carlo simulation to identify the atomistic mechanisms responsible for the structural relaxation over long time scales. We relate the logarithmic relaxation, observed in a number of disordered systems, with heat-release measurements. The microscopic mechanism associated with this logarithmic relaxation can be described as a two-step replenish and relax process. As the system relaxes, it reaches deeper energy states with logarithmically growing barriers that need to be unlocked to replenish the heat-releasing events leading to lower-energy configurations.

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Replenish and relax: Explaining logarithmic annealing in ion-implanted c-Si

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