Reply to "Comment on 'Current routes in hydrogenated microcrystalline silicon'"

The comment of Vetushka [Phys. Rev. B81, 237301 (2010)] represents a conductive atomic force microscopy study of μc-Si:H. The observed higher conductivity at the known columns (grain) edges was suggested to reflect an oxide buildup that is due to a tip-surface contact effect. The commenters further suggest that this is also the case in our observations that we interpreted to be due to the relatively high conductivity of these edges. Taking many and detailed precautions, including all those proposed in the comment, appears to indicate that at least in our samples our original interpretation is valid. This interpretation is strongly supported by our current imaging tunneling spectroscopy study in which no tip-surface contact effect exists.