Resistivity measurement of V3Si single crystal in the mixed superconducting state

I. B. Goldberg*, E. Ehrenfreund, M. Weger

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Measurements of the resistivity of a V3Si single crystal in the mixed superconducting state, near the critical temperature Tc indicate a sharp peak in the critical field H¢ for the onset of resistivity. In the (100) direction, H¢ is approximately five times larger than in the vicinity of this direction, and the width of the peak in H¢ is approximately 2.5°. The crystal had been subjected to stress of order 50 kg/cm2 in the (100) direction. A tentative explanation is suggested which takes into account the domain structure caused by the martensitic transformation. The sharp peak and the large anisotropy are attributed to the possibility that the domain walls act as potential barriers to the flux flow.

Original languageEnglish
Pages (from-to)555-559
Number of pages5
JournalSolid State Communications
Volume8
Issue number7
DOIs
StatePublished - 1 Apr 1970

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