TY - JOUR
T1 - Resistivity measurement of V3Si single crystal in the mixed superconducting state
AU - Goldberg, I. B.
AU - Ehrenfreund, E.
AU - Weger, M.
PY - 1970/4/1
Y1 - 1970/4/1
N2 - Measurements of the resistivity of a V3Si single crystal in the mixed superconducting state, near the critical temperature Tc indicate a sharp peak in the critical field H¢ for the onset of resistivity. In the (100) direction, H¢ is approximately five times larger than in the vicinity of this direction, and the width of the peak in H¢ is approximately 2.5°. The crystal had been subjected to stress of order 50 kg/cm2 in the (100) direction. A tentative explanation is suggested which takes into account the domain structure caused by the martensitic transformation. The sharp peak and the large anisotropy are attributed to the possibility that the domain walls act as potential barriers to the flux flow.
AB - Measurements of the resistivity of a V3Si single crystal in the mixed superconducting state, near the critical temperature Tc indicate a sharp peak in the critical field H¢ for the onset of resistivity. In the (100) direction, H¢ is approximately five times larger than in the vicinity of this direction, and the width of the peak in H¢ is approximately 2.5°. The crystal had been subjected to stress of order 50 kg/cm2 in the (100) direction. A tentative explanation is suggested which takes into account the domain structure caused by the martensitic transformation. The sharp peak and the large anisotropy are attributed to the possibility that the domain walls act as potential barriers to the flux flow.
UR - http://www.scopus.com/inward/record.url?scp=49849118934&partnerID=8YFLogxK
U2 - 10.1016/0038-1098(70)90303-0
DO - 10.1016/0038-1098(70)90303-0
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AN - SCOPUS:49849118934
SN - 0038-1098
VL - 8
SP - 555
EP - 559
JO - Solid State Communications
JF - Solid State Communications
IS - 7
ER -