Resistivity measurement of V₃Si single crystal in the mixed superconducting state

Measurements of the resistivity of a V₃Si single crystal in the mixed superconducting state, near the critical temperature T_c indicate a sharp peak in the critical field H_¢ for the onset of resistivity. In the (100) direction, H_¢ is approximately five times larger than in the vicinity of this direction, and the width of the peak in H_¢ is approximately 2.5°. The crystal had been subjected to stress of order 50 kg/cm² in the (100) direction. A tentative explanation is suggested which takes into account the domain structure caused by the martensitic transformation. The sharp peak and the large anisotropy are attributed to the possibility that the domain walls act as potential barriers to the flux flow.