Resonant Raman scattering in stage-1 graphite acceptor intercalated compounds: C-AsF5

I. Ohana; Y. Yacoby; D. Schmeltzer

doi:10.1103/PhysRevB.36.3442

Resonant Raman scattering in stage-1 graphite acceptor intercalated compounds: C-AsF5

I. Ohana^*
, Y. Yacoby
, D. Schmeltzer

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A Raman scattering cross section for stage-1 graphite acceptor intercalated compounds is calculated within a two-dimensional tight-binding electronic band model. It is shown that the two-band resonant Raman scattering process is much more efficient than the possible three-band process. The experimental results on stage-1 C-AsF5 are fitted to the two-band model and the fitting procedure yields the threshold for the valence- to conduction-band transition T=2.45 eV, and the broadening constant =0.02 eV.

Original language	English
Pages (from-to)	3442-3448
Number of pages	7
Journal	Physical Review B-Condensed Matter
Volume	36
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevB.36.3442
State	Published - 1987

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abstract = "A Raman scattering cross section for stage-1 graphite acceptor intercalated compounds is calculated within a two-dimensional tight-binding electronic band model. It is shown that the two-band resonant Raman scattering process is much more efficient than the possible three-band process. The experimental results on stage-1 C-AsF5 are fitted to the two-band model and the fitting procedure yields the threshold for the valence- to conduction-band transition T=2.45 eV, and the broadening constant =0.02 eV.",

author = "I. Ohana and Y. Yacoby and D. Schmeltzer",

year = "1987",

doi = "10.1103/PhysRevB.36.3442",

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N2 - A Raman scattering cross section for stage-1 graphite acceptor intercalated compounds is calculated within a two-dimensional tight-binding electronic band model. It is shown that the two-band resonant Raman scattering process is much more efficient than the possible three-band process. The experimental results on stage-1 C-AsF5 are fitted to the two-band model and the fitting procedure yields the threshold for the valence- to conduction-band transition T=2.45 eV, and the broadening constant =0.02 eV.

AB - A Raman scattering cross section for stage-1 graphite acceptor intercalated compounds is calculated within a two-dimensional tight-binding electronic band model. It is shown that the two-band resonant Raman scattering process is much more efficient than the possible three-band process. The experimental results on stage-1 C-AsF5 are fitted to the two-band model and the fitting procedure yields the threshold for the valence- to conduction-band transition T=2.45 eV, and the broadening constant =0.02 eV.

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Resonant Raman scattering in stage-1 graphite acceptor intercalated compounds: C-AsF5

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