Abstract
A Raman scattering cross section for stage-1 graphite acceptor intercalated compounds is calculated within a two-dimensional tight-binding electronic band model. It is shown that the two-band resonant Raman scattering process is much more efficient than the possible three-band process. The experimental results on stage-1 C-AsF5 are fitted to the two-band model and the fitting procedure yields the threshold for the valence- to conduction-band transition T=2.45 eV, and the broadening constant =0.02 eV.
| Original language | English |
|---|---|
| Pages (from-to) | 3442-3448 |
| Number of pages | 7 |
| Journal | Physical Review B |
| Volume | 36 |
| Issue number | 6 |
| DOIs | |
| State | Published - 1987 |