Role of carbon in enhancing the performance of MgB2 superconductor

V. P.S. Awana; Arpita Vajpayee; Monika Mudgel; Rajeev Rawat; Somobrata Acharya; H. Kishan; E. Takayama-Muromachi; A. V. Narlikar; I. Felner

doi:10.1016/j.physc.2007.08.011

Role of carbon in enhancing the performance of MgB₂ superconductor

V. P.S. Awana^*
, Arpita Vajpayee
, Monika Mudgel
, Rajeev Rawat
, Somobrata Acharya
, H. Kishan
, E. Takayama-Muromachi
, A. V. Narlikar
, I. Felner

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The enhancement of the critical current density (J_c(H)) of carbon and nano-SiC doped MgB₂ is presented and compared. The upper critical field (H_c2) being determined from resistivity under magnetic field experiments is though improved for both C substitution and nano-SiC addition the same is more pronounced for the former. In MgB_2-xC_x carbon is substituted for boron that induces disorder in the boron network and acts as internal pinning centres. The optimal J_c(H) values are obtained for x = 0.1 sample. In case of nano-SiC doped in MgB₂, the J_c(H) improves more profoundly and two simultaneous mechanisms seems responsible to this enhancement. Highly reactive nano-SiC releases free carbon atom, which gets easily incorporated into the MgB₂ lattice to act as intrinsic pinning centres. Further enhancement is observed for higher nano-SiC concentrations, where the un-reacted components serve as additional extrinsic pinning centres.

Original language	English
Pages (from-to)	67-72
Number of pages	6
Journal	Physica C: Superconductivity and its Applications
Volume	467
Issue number	1-2
DOIs	https://doi.org/10.1016/j.physc.2007.08.011
State	Published - 1 Dec 2007

Keywords

Critical current density
Flux pinning
MgB superconductor
Nano-particle doping

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10.1016/j.physc.2007.08.011

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title = "Role of carbon in enhancing the performance of MgB2 superconductor",

abstract = "The enhancement of the critical current density (Jc(H)) of carbon and nano-SiC doped MgB2 is presented and compared. The upper critical field (Hc2) being determined from resistivity under magnetic field experiments is though improved for both C substitution and nano-SiC addition the same is more pronounced for the former. In MgB2-xCx carbon is substituted for boron that induces disorder in the boron network and acts as internal pinning centres. The optimal Jc(H) values are obtained for x = 0.1 sample. In case of nano-SiC doped in MgB2, the Jc(H) improves more profoundly and two simultaneous mechanisms seems responsible to this enhancement. Highly reactive nano-SiC releases free carbon atom, which gets easily incorporated into the MgB2 lattice to act as intrinsic pinning centres. Further enhancement is observed for higher nano-SiC concentrations, where the un-reacted components serve as additional extrinsic pinning centres.",

keywords = "Critical current density, Flux pinning, MgB superconductor, Nano-particle doping",

author = "Awana, \{V. P.S.\} and Arpita Vajpayee and Monika Mudgel and Rajeev Rawat and Somobrata Acharya and H. Kishan and E. Takayama-Muromachi and Narlikar, \{A. V.\} and I. Felner",

year = "2007",

month = dec,

day = "1",

doi = "10.1016/j.physc.2007.08.011",

language = "אנגלית",

volume = "467",

pages = "67--72",

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T1 - Role of carbon in enhancing the performance of MgB2 superconductor

AU - Awana, V. P.S.

AU - Vajpayee, Arpita

AU - Mudgel, Monika

AU - Rawat, Rajeev

AU - Acharya, Somobrata

AU - Kishan, H.

AU - Takayama-Muromachi, E.

AU - Narlikar, A. V.

AU - Felner, I.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - The enhancement of the critical current density (Jc(H)) of carbon and nano-SiC doped MgB2 is presented and compared. The upper critical field (Hc2) being determined from resistivity under magnetic field experiments is though improved for both C substitution and nano-SiC addition the same is more pronounced for the former. In MgB2-xCx carbon is substituted for boron that induces disorder in the boron network and acts as internal pinning centres. The optimal Jc(H) values are obtained for x = 0.1 sample. In case of nano-SiC doped in MgB2, the Jc(H) improves more profoundly and two simultaneous mechanisms seems responsible to this enhancement. Highly reactive nano-SiC releases free carbon atom, which gets easily incorporated into the MgB2 lattice to act as intrinsic pinning centres. Further enhancement is observed for higher nano-SiC concentrations, where the un-reacted components serve as additional extrinsic pinning centres.

AB - The enhancement of the critical current density (Jc(H)) of carbon and nano-SiC doped MgB2 is presented and compared. The upper critical field (Hc2) being determined from resistivity under magnetic field experiments is though improved for both C substitution and nano-SiC addition the same is more pronounced for the former. In MgB2-xCx carbon is substituted for boron that induces disorder in the boron network and acts as internal pinning centres. The optimal Jc(H) values are obtained for x = 0.1 sample. In case of nano-SiC doped in MgB2, the Jc(H) improves more profoundly and two simultaneous mechanisms seems responsible to this enhancement. Highly reactive nano-SiC releases free carbon atom, which gets easily incorporated into the MgB2 lattice to act as intrinsic pinning centres. Further enhancement is observed for higher nano-SiC concentrations, where the un-reacted components serve as additional extrinsic pinning centres.

KW - Critical current density

KW - Flux pinning

KW - MgB superconductor

KW - Nano-particle doping

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SN - 0921-4534

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JO - Physica C: Superconductivity and its Applications

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IS - 1-2

ER -

Role of carbon in enhancing the performance of MgB₂ superconductor

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Keywords

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