Role of surface passivation in integrated sub-bandgap silicon photodetection

Rivka Gherabli, Meir Grajower, Joseph Shappir, Noa Mazurski, Menachem Wofsy, Naor Inbar, Jacob B. Khurgin, Uriel Levy

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

We study experimentally the effect of oxide removal on the sub-bandgap photodetection in silicon waveguides at the telecom wavelength regime. Depassivating the device allows for the enhancement of the quantum efficiency by about 2-3 times. Furthermore, the propagation loss within the device is significantly reduced by the oxide removal. Measuring the device 60 days after the depassivation shows slight differences. We provide a possible explanation for these observations. Clearly, passivation and depassivation play an essential role in the design and the implementation of such sub-bandgap photodetector devices for applications such as on-chip light monitoring.

Original languageAmerican English
Pages (from-to)2128-2131
Number of pages4
JournalOptics Letters
Volume45
Issue number7
DOIs
StatePublished - 1 Apr 2020

Bibliographical note

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© 2020 Optical Society of America

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