Role of surface passivation in integrated sub-bandgap silicon photodetection

Rivka Gherabli; Meir Grajower; Joseph Shappir; Noa Mazurski; Menachem Wofsy; Naor Inbar; Jacob B. Khurgin; Uriel Levy

doi:10.1364/OL.388983

Role of surface passivation in integrated sub-bandgap silicon photodetection

Rivka Gherabli, Meir Grajower, Joseph Shappir, Noa Mazurski, Menachem Wofsy, Naor Inbar, Jacob B. Khurgin, Uriel Levy

Department of Applied Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We study experimentally the effect of oxide removal on the sub-bandgap photodetection in silicon waveguides at the telecom wavelength regime. Depassivating the device allows for the enhancement of the quantum efficiency by about 2-3 times. Furthermore, the propagation loss within the device is significantly reduced by the oxide removal. Measuring the device 60 days after the depassivation shows slight differences. We provide a possible explanation for these observations. Clearly, passivation and depassivation play an essential role in the design and the implementation of such sub-bandgap photodetector devices for applications such as on-chip light monitoring.

Original language	American English
Pages (from-to)	2128-2131
Number of pages	4
Journal	Optics Letters
Volume	45
Issue number	7
DOIs	https://doi.org/10.1364/OL.388983
State	Published - 1 Apr 2020

Bibliographical note

Funding Information:
We acknowledge financial support from the Israeli-U.S. Binational Science Foundation (BSF), the PetaCloud consortium of the Israeli Innovation Authority. R.G. acknowledges the Israeli Ministry of Science for the Shulamit Aloni fellowship.

Funding Information:
Acknowledgment. We acknowledge financial support from the Israeli–U.S. Binational Science Foundation (BSF), the PetaCloud consortium of the Israeli Innovation Authority. R.G. acknowledges the Israeli Ministry of Science for the Shulamit Aloni fellowship.

Publisher Copyright:
© 2020 Optical Society of America

Access to Document

10.1364/OL.388983

Cite this

@article{a385d7214994499380ae872a006d43f7,

title = "Role of surface passivation in integrated sub-bandgap silicon photodetection",

abstract = "We study experimentally the effect of oxide removal on the sub-bandgap photodetection in silicon waveguides at the telecom wavelength regime. Depassivating the device allows for the enhancement of the quantum efficiency by about 2-3 times. Furthermore, the propagation loss within the device is significantly reduced by the oxide removal. Measuring the device 60 days after the depassivation shows slight differences. We provide a possible explanation for these observations. Clearly, passivation and depassivation play an essential role in the design and the implementation of such sub-bandgap photodetector devices for applications such as on-chip light monitoring.",

author = "Rivka Gherabli and Meir Grajower and Joseph Shappir and Noa Mazurski and Menachem Wofsy and Naor Inbar and Khurgin, {Jacob B.} and Uriel Levy",

note = "Funding Information: We acknowledge financial support from the Israeli-U.S. Binational Science Foundation (BSF), the PetaCloud consortium of the Israeli Innovation Authority. R.G. acknowledges the Israeli Ministry of Science for the Shulamit Aloni fellowship. Funding Information: Acknowledgment. We acknowledge financial support from the Israeli–U.S. Binational Science Foundation (BSF), the PetaCloud consortium of the Israeli Innovation Authority. R.G. acknowledges the Israeli Ministry of Science for the Shulamit Aloni fellowship. Publisher Copyright: {\textcopyright} 2020 Optical Society of America",

year = "2020",

month = apr,

day = "1",

doi = "10.1364/OL.388983",

language = "American English",

volume = "45",

pages = "2128--2131",

journal = "Optics Letters",

issn = "0146-9592",

publisher = "The Optical Society",

number = "7",

}

TY - JOUR

T1 - Role of surface passivation in integrated sub-bandgap silicon photodetection

AU - Gherabli, Rivka

AU - Grajower, Meir

AU - Shappir, Joseph

AU - Mazurski, Noa

AU - Wofsy, Menachem

AU - Inbar, Naor

AU - Khurgin, Jacob B.

AU - Levy, Uriel

N1 - Funding Information: We acknowledge financial support from the Israeli-U.S. Binational Science Foundation (BSF), the PetaCloud consortium of the Israeli Innovation Authority. R.G. acknowledges the Israeli Ministry of Science for the Shulamit Aloni fellowship. Funding Information: Acknowledgment. We acknowledge financial support from the Israeli–U.S. Binational Science Foundation (BSF), the PetaCloud consortium of the Israeli Innovation Authority. R.G. acknowledges the Israeli Ministry of Science for the Shulamit Aloni fellowship. Publisher Copyright: © 2020 Optical Society of America

PY - 2020/4/1

Y1 - 2020/4/1

N2 - We study experimentally the effect of oxide removal on the sub-bandgap photodetection in silicon waveguides at the telecom wavelength regime. Depassivating the device allows for the enhancement of the quantum efficiency by about 2-3 times. Furthermore, the propagation loss within the device is significantly reduced by the oxide removal. Measuring the device 60 days after the depassivation shows slight differences. We provide a possible explanation for these observations. Clearly, passivation and depassivation play an essential role in the design and the implementation of such sub-bandgap photodetector devices for applications such as on-chip light monitoring.

AB - We study experimentally the effect of oxide removal on the sub-bandgap photodetection in silicon waveguides at the telecom wavelength regime. Depassivating the device allows for the enhancement of the quantum efficiency by about 2-3 times. Furthermore, the propagation loss within the device is significantly reduced by the oxide removal. Measuring the device 60 days after the depassivation shows slight differences. We provide a possible explanation for these observations. Clearly, passivation and depassivation play an essential role in the design and the implementation of such sub-bandgap photodetector devices for applications such as on-chip light monitoring.

UR - http://www.scopus.com/inward/record.url?scp=85082772231&partnerID=8YFLogxK

U2 - 10.1364/OL.388983

DO - 10.1364/OL.388983

M3 - Article

C2 - 32236086

AN - SCOPUS:85082772231

SN - 0146-9592

VL - 45

SP - 2128

EP - 2131

JO - Optics Letters

JF - Optics Letters

IS - 7

ER -

Role of surface passivation in integrated sub-bandgap silicon photodetection

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this