Role of surface substances in excitation of porous silicon photoluminescence

Larisa Yu Khomenkova; Nicolay P. Baran; Berdishukur R. Dzhumaev; Nadezhda E. Korsunskaya; Tatiana V. Torchinskaya; Yehuda Goldstein; Esther Savir; Abraam Many

Role of surface substances in excitation of porous silicon photoluminescence

Larisa Yu Khomenkova^*, Nicolay P. Baran, Berdishukur R. Dzhumaev, Nadezhda E. Korsunskaya, Tatiana V. Torchinskaya, Yehuda Goldstein, Esther Savir, Abraam Many

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

Photoluminescence (PL) and photoluminescence excitation (PLE) spectra studies as well as SIMS and FTIR methods were used for investigation of PL excitation mechanism of porous silicon (PS). It is shown that there are two types of PS PLE spectra, which consist of either two bands (visible and ultraviolet) or only ultraviolet one. The different dependencies of intensity of each PLE band upon anodization regimes as well as during aging and thermal treatment were observed. Two excitation channels have been shown to be present in PS. The visible PLE band at 300 K has been attributed to light absorption of some species on Si wire surface.

Original language	English
Pages (from-to)	111-115
Number of pages	5
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3725
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1998 International Conference on Solid State Crystals, ICSSC'98 : Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology - Zakopane, POL Duration: 12 Oct 1998 → 16 Oct 1998

Cite this

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title = "Role of surface substances in excitation of porous silicon photoluminescence",

abstract = "Photoluminescence (PL) and photoluminescence excitation (PLE) spectra studies as well as SIMS and FTIR methods were used for investigation of PL excitation mechanism of porous silicon (PS). It is shown that there are two types of PS PLE spectra, which consist of either two bands (visible and ultraviolet) or only ultraviolet one. The different dependencies of intensity of each PLE band upon anodization regimes as well as during aging and thermal treatment were observed. Two excitation channels have been shown to be present in PS. The visible PLE band at 300 K has been attributed to light absorption of some species on Si wire surface.",

author = "Khomenkova, {Larisa Yu} and Baran, {Nicolay P.} and Dzhumaev, {Berdishukur R.} and Korsunskaya, {Nadezhda E.} and Torchinskaya, {Tatiana V.} and Yehuda Goldstein and Esther Savir and Abraam Many",

year = "1999",

language = "אנגלית",

volume = "3725",

pages = "111--115",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Proceedings of the 1998 International Conference on Solid State Crystals, ICSSC'98 : Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology ; Conference date: 12-10-1998 Through 16-10-1998",

}

TY - JOUR

T1 - Role of surface substances in excitation of porous silicon photoluminescence

AU - Khomenkova, Larisa Yu

AU - Baran, Nicolay P.

AU - Dzhumaev, Berdishukur R.

AU - Korsunskaya, Nadezhda E.

AU - Torchinskaya, Tatiana V.

AU - Goldstein, Yehuda

AU - Savir, Esther

AU - Many, Abraam

PY - 1999

Y1 - 1999

N2 - Photoluminescence (PL) and photoluminescence excitation (PLE) spectra studies as well as SIMS and FTIR methods were used for investigation of PL excitation mechanism of porous silicon (PS). It is shown that there are two types of PS PLE spectra, which consist of either two bands (visible and ultraviolet) or only ultraviolet one. The different dependencies of intensity of each PLE band upon anodization regimes as well as during aging and thermal treatment were observed. Two excitation channels have been shown to be present in PS. The visible PLE band at 300 K has been attributed to light absorption of some species on Si wire surface.

AB - Photoluminescence (PL) and photoluminescence excitation (PLE) spectra studies as well as SIMS and FTIR methods were used for investigation of PL excitation mechanism of porous silicon (PS). It is shown that there are two types of PS PLE spectra, which consist of either two bands (visible and ultraviolet) or only ultraviolet one. The different dependencies of intensity of each PLE band upon anodization regimes as well as during aging and thermal treatment were observed. Two excitation channels have been shown to be present in PS. The visible PLE band at 300 K has been attributed to light absorption of some species on Si wire surface.

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AN - SCOPUS:0032658592

SN - 0277-786X

VL - 3725

SP - 111

EP - 115

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1998 International Conference on Solid State Crystals, ICSSC'98 : Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology

Y2 - 12 October 1998 through 16 October 1998

ER -

Role of surface substances in excitation of porous silicon photoluminescence

Abstract

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