Abstract
Scanning tunneling microscopy and spectroscopy are employed in studies of ZnO single crystals. In particular we focus on spatially resolved tunneling spectroscopy of electron accumulation layers, produced by low-energy implantation of hydrogen ions on the oxygen (0001¯) face. These layers constitute a quantized two-dimensional electron gas system on the free surface. The tunneling current-voltage (Formula presented) and (Formula presented) vs (Formula presented) curves acquired after implantation show structures which reflect the energy minima of the two-dimensional electronic subbands and localized surface states.
Original language | English |
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Pages (from-to) | 6274-6277 |
Number of pages | 4 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 57 |
Issue number | 11 |
DOIs | |
State | Published - 1998 |