Sensitivity of conductance fluctuations to the addition of single elastic scatterers in mesoscopic GaAs/AlxGa1-xAs heterostructures

S. J. Klepper*, O. Millo, M. W. Keller, D. E. Prober, R. N. Sacks

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We have studied magnetoconductance fluctuations in mesoscopic wires fabricated from GaAs/AlxGa1-xAs heterostructures. By photoionizing DX centers in the AlxGa1-xAs, we controllably alter the elastic-scattering configuration of our devices. A technique of conductance-fluctuation difference traces allows us to quantitatively study changes to the characteristic device fluctuations. The amplitude and temperature dependence of these conductance changes agree well with theory. We can also resolve switching events in device conductance due to the effect of adding a single scatterer.

Original languageAmerican English
Pages (from-to)8380-8383
Number of pages4
JournalPhysical Review B
Volume44
Issue number15
DOIs
StatePublished - 1991
Externally publishedYes

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