Sensitivity of conductance fluctuations to the addition of single elastic scatterers in mesoscopic GaAs/AlxGa1-xAs heterostructures

S. J. Klepper; O. Millo; M. W. Keller; D. E. Prober; R. N. Sacks

doi:10.1103/PhysRevB.44.8380

Sensitivity of conductance fluctuations to the addition of single elastic scatterers in mesoscopic GaAs/AlxGa1-xAs heterostructures

S. J. Klepper^*, O. Millo, M. W. Keller, D. E. Prober, R. N. Sacks

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We have studied magnetoconductance fluctuations in mesoscopic wires fabricated from GaAs/AlxGa1-xAs heterostructures. By photoionizing DX centers in the AlxGa1-xAs, we controllably alter the elastic-scattering configuration of our devices. A technique of conductance-fluctuation difference traces allows us to quantitatively study changes to the characteristic device fluctuations. The amplitude and temperature dependence of these conductance changes agree well with theory. We can also resolve switching events in device conductance due to the effect of adding a single scatterer.

Original language	English
Pages (from-to)	8380-8383
Number of pages	4
Journal	Physical Review B
Volume	44
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.44.8380
State	Published - 1991
Externally published	Yes

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title = "Sensitivity of conductance fluctuations to the addition of single elastic scatterers in mesoscopic GaAs/AlxGa1-xAs heterostructures",

abstract = "We have studied magnetoconductance fluctuations in mesoscopic wires fabricated from GaAs/AlxGa1-xAs heterostructures. By photoionizing DX centers in the AlxGa1-xAs, we controllably alter the elastic-scattering configuration of our devices. A technique of conductance-fluctuation difference traces allows us to quantitatively study changes to the characteristic device fluctuations. The amplitude and temperature dependence of these conductance changes agree well with theory. We can also resolve switching events in device conductance due to the effect of adding a single scatterer.",

author = "Klepper, {S. J.} and O. Millo and Keller, {M. W.} and Prober, {D. E.} and Sacks, {R. N.}",

year = "1991",

doi = "10.1103/PhysRevB.44.8380",

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AU - Klepper, S. J.

AU - Millo, O.

AU - Keller, M. W.

AU - Prober, D. E.

AU - Sacks, R. N.

PY - 1991

Y1 - 1991

N2 - We have studied magnetoconductance fluctuations in mesoscopic wires fabricated from GaAs/AlxGa1-xAs heterostructures. By photoionizing DX centers in the AlxGa1-xAs, we controllably alter the elastic-scattering configuration of our devices. A technique of conductance-fluctuation difference traces allows us to quantitatively study changes to the characteristic device fluctuations. The amplitude and temperature dependence of these conductance changes agree well with theory. We can also resolve switching events in device conductance due to the effect of adding a single scatterer.

AB - We have studied magnetoconductance fluctuations in mesoscopic wires fabricated from GaAs/AlxGa1-xAs heterostructures. By photoionizing DX centers in the AlxGa1-xAs, we controllably alter the elastic-scattering configuration of our devices. A technique of conductance-fluctuation difference traces allows us to quantitatively study changes to the characteristic device fluctuations. The amplitude and temperature dependence of these conductance changes agree well with theory. We can also resolve switching events in device conductance due to the effect of adding a single scatterer.

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JO - Physical Review B

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IS - 15

ER -

Sensitivity of conductance fluctuations to the addition of single elastic scatterers in mesoscopic GaAs/AlxGa1-xAs heterostructures

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