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Sensitization of the electron lifetime in a-Si:H: The story of oxygen
I. Balberg
, R. Naidis
, L. F. Fonseca
, S. Z. Weisz
, J. P. Conde
, P. Alpuim
, V. Chu
Racah Institute of Physics
Research output
:
Contribution to journal
›
Article
›
peer-review
24
Scopus citations
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Dive into the research topics of 'Sensitization of the electron lifetime in a-Si:H: The story of oxygen'. Together they form a unique fingerprint.
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Physics
Temperature Dependence
100%
Luminous Intensity
100%
Amorphous Silicon
100%
Photoelectricity
100%
Minority Carrier
100%
Majority Carrier
100%
Keyphrases
A-Si
100%
Electron Lifetime
100%
Energy Levels
25%
Model Simulation
25%
Simulation Analysis
25%
Valence Band Edge
25%
Dangling Bonds
25%
Band Tail States
25%
Light Intensity Dependence
25%
Hydrogenated
25%
Hole Trapping
25%
Photoelectronic Property
25%
Minority Carrier Concentration
25%
Temperature Dependence
25%
Majority Carrier
25%
Amorphous Silicon a-Si:H
25%
Oxygen-induced
25%
Biochemistry, Genetics and Molecular Biology
Light Intensity
100%
Temperature Dependence
100%
Lifespan
100%
Sensitization
100%
Material Science
Carrier Concentration
100%
Amorphous Silicon
100%
Engineering
Electron Lifetime
100%