TY - JOUR
T1 - Sensitization of the holes lifetime by the addition of dangling bonds in a-Si:H
AU - Fonseca, L. F.
AU - Weisz, S. Z.
AU - Balberg, I.
PY - 2001
Y1 - 2001
N2 - This paper is concerned with the phenomenon of the increase of the holes lifetime with the increase of the dangling bond concentration in a-Si:H. This rather surprising phenomenon that was observed, but not discussed, previously is shown to be a non-trivial effect which is based on the charged nature of the dangling bonds and a special scenario of the concentrations of the various defect states in the material. The most important implication of our study is that the charged dangling bonds can sensitize the valence band tail states, in contrast with the accepted roles of these types of states. The present understanding suggests that many new interesting phototransport phenomena can be found in a-Si:H.
AB - This paper is concerned with the phenomenon of the increase of the holes lifetime with the increase of the dangling bond concentration in a-Si:H. This rather surprising phenomenon that was observed, but not discussed, previously is shown to be a non-trivial effect which is based on the charged nature of the dangling bonds and a special scenario of the concentrations of the various defect states in the material. The most important implication of our study is that the charged dangling bonds can sensitize the valence band tail states, in contrast with the accepted roles of these types of states. The present understanding suggests that many new interesting phototransport phenomena can be found in a-Si:H.
UR - http://www.scopus.com/inward/record.url?scp=0035558283&partnerID=8YFLogxK
U2 - 10.1557/proc-664-a22.2
DO - 10.1557/proc-664-a22.2
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AN - SCOPUS:0035558283
SN - 0272-9172
VL - 664
SP - A2221-A2226
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Amorphous and Heterogeneous Silicon Based Films 2001
Y2 - 16 April 2001 through 20 April 2001
ER -