Abstract
We report the development of a process for fabricating etched surface superlattices (SSL). We utilize low-voltage electron cyclotron resonance plasma etching in conjunction with electron beam lithography to form a short-pitch grating relief on GaAs/AIGaAs heterostructures hosting a high-mobility two-dimensional electron gas (2DEG). The process minimizes damage to the 2DEG and results in highly uniform etched gratings. A Schottky gate covering the etched surface appears to improve the electrical properties of the SSLs. Magnetotransport measurements show the effectiveness of this technique in realizing high-quality SSLs with periods down to 100 nm.
| Original language | English |
|---|---|
| Pages (from-to) | 987-990 |
| Number of pages | 4 |
| Journal | Semiconductor Science and Technology |
| Volume | 12 |
| Issue number | 8 |
| DOIs | |
| State | Published - Aug 1997 |
| Externally published | Yes |
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