Abstract
Si-rich-SiO2 layers with high excess Si content grown by radio-frequency magnetron sputtering were studied by Raman scattering, X-Ray diffraction, electron paramagnetic resonance, and photoluminescence methods. It was found that high temperature annealing stimulates the formation of Si crystallites with preferred orientation in <111> direction. It was shown that the effect of crystallites orientation depends on excess Si content. Besides, comparable contribution of amorphous and crystalline silicon phases in the structure was observed for the annealed layers with Si excess more than 55%. It was observed that both crystalline and amorphous Si inclusions give the essential contribution to the photoluminescence spectra.
Original language | English |
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Pages (from-to) | 147-159 |
Number of pages | 13 |
Journal | Physics Procedia |
Volume | 2 |
Issue number | 2 |
DOIs | |
State | Published - Aug 2009 |
Event | 2008 International Conference on Luminescence and Optical Spectroscopy of Condensed Matter, ICL'08 - Lyon, France Duration: 7 Jul 2008 → 11 Jul 2008 |
Keywords
- Crystallites
- EPR
- Magnetron sputtering
- Photoluminescence
- XRD