Silicon carbide detectors for sub-GeV dark matter

Sinéad M. Griffin*, Yonit Hochberg, Katherine Inzani, Noah Kurinsky, Tongyan Lin, To Chin Yu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

56 Scopus citations

Abstract

We propose the use of silicon carbide (SiC) for direct detection of sub-GeV dark matter. SiC has properties similar to both silicon and diamond but has two key advantages: (i) it is a polar semiconductor which allows sensitivity to a broader range of dark matter candidates; and (ii) it exists in many stable polymorphs with varying physical properties and hence has tunable sensitivity to various dark matter models. We show that SiC is an excellent target to search for electron, nuclear and phonon excitations from scattering of dark matter down to 10 keV in mass, as well as for absorption processes of dark matter down to 10 meV in mass. Combined with its widespread use as an alternative to silicon in other detector technologies and its availability compared to diamond, our results demonstrate that SiC holds much promise as a novel dark matter detector.

Original languageAmerican English
Article number075002
JournalPhysical Review D
Volume103
Issue number7
DOIs
StatePublished - 6 Apr 2021

Bibliographical note

Publisher Copyright:
© 2021 authors. Published by the American Physical Society.

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