TY - JOUR
T1 - Silicon on insulator photo-activated modulator
AU - Abraham, Doron
AU - Zalevsky, Zeev
AU - Chelly, Avraham
AU - Shappir, Jossef
AU - Rosenbluh, Michael
PY - 2008/12
Y1 - 2008/12
N2 - In this paper we present a novel concept for a photo-activated modulator device based on silicon on insulator (SOI-PAM) and in which the information is electronic while the modulation command is optical. Free carriers are generated by external illumination in the vicinity of the information channel. A side-gate potential selects the type of carriers controlling the electric resistance of the channel. The channel is surrounded by oxide trenches to avoid cross-talk current. Another side potential clears the control carriers allowing a high-frequency modulation like in a Metal-Oxide-Semiconductor field effect transistor (MOSFET) device. Since the control command is photonic, faster operation rates are anticipated. The proposed device has dimensions of less than 1 cubic micron.
AB - In this paper we present a novel concept for a photo-activated modulator device based on silicon on insulator (SOI-PAM) and in which the information is electronic while the modulation command is optical. Free carriers are generated by external illumination in the vicinity of the information channel. A side-gate potential selects the type of carriers controlling the electric resistance of the channel. The channel is surrounded by oxide trenches to avoid cross-talk current. Another side potential clears the control carriers allowing a high-frequency modulation like in a Metal-Oxide-Semiconductor field effect transistor (MOSFET) device. Since the control command is photonic, faster operation rates are anticipated. The proposed device has dimensions of less than 1 cubic micron.
KW - Electro-optical devices
KW - Photonic intergrated circuits
UR - http://www.scopus.com/inward/record.url?scp=56049099751&partnerID=8YFLogxK
U2 - 10.1016/j.mejo.2008.06.075
DO - 10.1016/j.mejo.2008.06.075
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AN - SCOPUS:56049099751
SN - 0026-2692
VL - 39
SP - 1429
EP - 1432
JO - Microelectronics Journal
JF - Microelectronics Journal
IS - 12
ER -