Simulation of optically pumped mid-infrared intersubband semiconductor laser structures

Jin Wang*, J. P. Leburton, Z. Moussa, F. H. Julien, A. Sa'ar

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

A theoretical self-consistent investigation of optically pumped mid-infrared intersubband semiconductor laser with hot electron effects is presented. Electron dynamics under optical pumping are investigated within a rate equation formulation where particle and energy flow equations are derived from Boltzmann's equation using Fermi statistics. Electron-polar optical phonon interactions with suitable screening are calculated by using a macroscopic model with slab and interface phonon modes. Our calculations show that despite hot electron effects, population inversion between the first and second excited states can occur at low temperatures under intersubband optical excitation. It is anticipated that lasing in the mid-infrared can be achieved with asymmetric quantum well structures optimized for electron concentrations exceeding 1011/cm2.

Original languageAmerican English
Pages (from-to)1970-1978
Number of pages9
JournalJournal of Applied Physics
Volume80
Issue number4
DOIs
StatePublished - 15 Aug 1996

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