TY - JOUR
T1 - Single-electron charging effects in insulating wires
AU - Chandrasekhar, Venkat
AU - Ovadyahu, Zvi
AU - Webb, Richard A.
PY - 1991
Y1 - 1991
N2 - We present measurements of the transport properties of 0.75-long, narrow, insulating indium oxide wires and rings. These devices have no apparent tunnel barriers, yet they exhibit effects similar to those found in series arrays of very small-capacitance tunnel junctions: highly nonlinear I-V characteristics and a zero-bias conductance which is periodic in a voltage applied by means of a lateral gate. These effects are due to the influence of single-electron charging on transport through localized states in the insulating regime.
AB - We present measurements of the transport properties of 0.75-long, narrow, insulating indium oxide wires and rings. These devices have no apparent tunnel barriers, yet they exhibit effects similar to those found in series arrays of very small-capacitance tunnel junctions: highly nonlinear I-V characteristics and a zero-bias conductance which is periodic in a voltage applied by means of a lateral gate. These effects are due to the influence of single-electron charging on transport through localized states in the insulating regime.
UR - http://www.scopus.com/inward/record.url?scp=4143099756&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.67.2862
DO - 10.1103/PhysRevLett.67.2862
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AN - SCOPUS:4143099756
SN - 0031-9007
VL - 67
SP - 2862
EP - 2865
JO - Physical Review Letters
JF - Physical Review Letters
IS - 20
ER -