Single-electron charging effects in insulating wires

Venkat Chandrasekhar*, Zvi Ovadyahu, Richard A. Webb

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

39 Scopus citations

Abstract

We present measurements of the transport properties of 0.75-long, narrow, insulating indium oxide wires and rings. These devices have no apparent tunnel barriers, yet they exhibit effects similar to those found in series arrays of very small-capacitance tunnel junctions: highly nonlinear I-V characteristics and a zero-bias conductance which is periodic in a voltage applied by means of a lateral gate. These effects are due to the influence of single-electron charging on transport through localized states in the insulating regime.

Original languageEnglish
Pages (from-to)2862-2865
Number of pages4
JournalPhysical Review Letters
Volume67
Issue number20
DOIs
StatePublished - 1991
Externally publishedYes

Fingerprint

Dive into the research topics of 'Single-electron charging effects in insulating wires'. Together they form a unique fingerprint.

Cite this