Single-electron charging effects in insulating wires

Venkat Chandrasekhar; Zvi Ovadyahu; Richard A. Webb

doi:10.1103/PhysRevLett.67.2862

Single-electron charging effects in insulating wires

Venkat Chandrasekhar^*
, Zvi Ovadyahu
, Richard A. Webb

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

We present measurements of the transport properties of 0.75-long, narrow, insulating indium oxide wires and rings. These devices have no apparent tunnel barriers, yet they exhibit effects similar to those found in series arrays of very small-capacitance tunnel junctions: highly nonlinear I-V characteristics and a zero-bias conductance which is periodic in a voltage applied by means of a lateral gate. These effects are due to the influence of single-electron charging on transport through localized states in the insulating regime.

Original language	English
Pages (from-to)	2862-2865
Number of pages	4
Journal	Physical Review Letters
Volume	67
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevLett.67.2862
State	Published - 1991
Externally published	Yes

Access to Document

10.1103/PhysRevLett.67.2862

Cite this

@article{5c35dfd9c7ef4a9aa2faeb02be1b16ce,

title = "Single-electron charging effects in insulating wires",

abstract = "We present measurements of the transport properties of 0.75-long, narrow, insulating indium oxide wires and rings. These devices have no apparent tunnel barriers, yet they exhibit effects similar to those found in series arrays of very small-capacitance tunnel junctions: highly nonlinear I-V characteristics and a zero-bias conductance which is periodic in a voltage applied by means of a lateral gate. These effects are due to the influence of single-electron charging on transport through localized states in the insulating regime.",

author = "Venkat Chandrasekhar and Zvi Ovadyahu and Webb, \{Richard A.\}",

year = "1991",

doi = "10.1103/PhysRevLett.67.2862",

language = "אנגלית",

volume = "67",

pages = "2862--2865",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "20",

}

TY - JOUR

T1 - Single-electron charging effects in insulating wires

AU - Chandrasekhar, Venkat

AU - Ovadyahu, Zvi

AU - Webb, Richard A.

PY - 1991

Y1 - 1991

N2 - We present measurements of the transport properties of 0.75-long, narrow, insulating indium oxide wires and rings. These devices have no apparent tunnel barriers, yet they exhibit effects similar to those found in series arrays of very small-capacitance tunnel junctions: highly nonlinear I-V characteristics and a zero-bias conductance which is periodic in a voltage applied by means of a lateral gate. These effects are due to the influence of single-electron charging on transport through localized states in the insulating regime.

AB - We present measurements of the transport properties of 0.75-long, narrow, insulating indium oxide wires and rings. These devices have no apparent tunnel barriers, yet they exhibit effects similar to those found in series arrays of very small-capacitance tunnel junctions: highly nonlinear I-V characteristics and a zero-bias conductance which is periodic in a voltage applied by means of a lateral gate. These effects are due to the influence of single-electron charging on transport through localized states in the insulating regime.

UR - https://www.scopus.com/pages/publications/4143099756

U2 - 10.1103/PhysRevLett.67.2862

DO - 10.1103/PhysRevLett.67.2862

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:4143099756

SN - 0031-9007

VL - 67

SP - 2862

EP - 2865

JO - Physical Review Letters

JF - Physical Review Letters

IS - 20

ER -

Single-electron charging effects in insulating wires

Abstract

Access to Document

Other files and links

Fingerprint

Cite this