Single-electron tunneling effects in granular metal films

E. Bar-Sadeh; Y. Goldstein; C. Zhang; H. Deng; B. Abeles; O. Millo

doi:10.1103/PhysRevB.50.8961

Single-electron tunneling effects in granular metal films

E. Bar-Sadeh^*, Y. Goldstein, C. Zhang, H. Deng, B. Abeles, O. Millo

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

78 Scopus citations

Abstract

Cryogenic scanning tunneling microscopy is used to study local electrical-transport properties of thin granular Au/Al2O3 films in the vicinity of the percolation threshold. The current-voltage characteristics are found to vary dramatically from one tip position to another over distances of the order of a few nanometers. These characteristics often exhibit interesting Coulomb-staircase structures having unusual variations in step widths and heights due to complex tunneling paths. A triple-barrier tunnel-junction model accounts quantitatively for the experimental results.

Original language	English
Pages (from-to)	8961-8964
Number of pages	4
Journal	Physical Review B
Volume	50
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.50.8961
State	Published - 1994

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10.1103/PhysRevB.50.8961

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abstract = "Cryogenic scanning tunneling microscopy is used to study local electrical-transport properties of thin granular Au/Al2O3 films in the vicinity of the percolation threshold. The current-voltage characteristics are found to vary dramatically from one tip position to another over distances of the order of a few nanometers. These characteristics often exhibit interesting Coulomb-staircase structures having unusual variations in step widths and heights due to complex tunneling paths. A triple-barrier tunnel-junction model accounts quantitatively for the experimental results.",

author = "E. Bar-Sadeh and Y. Goldstein and C. Zhang and H. Deng and B. Abeles and O. Millo",

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AU - Goldstein, Y.

AU - Zhang, C.

AU - Deng, H.

AU - Abeles, B.

AU - Millo, O.

PY - 1994

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AB - Cryogenic scanning tunneling microscopy is used to study local electrical-transport properties of thin granular Au/Al2O3 films in the vicinity of the percolation threshold. The current-voltage characteristics are found to vary dramatically from one tip position to another over distances of the order of a few nanometers. These characteristics often exhibit interesting Coulomb-staircase structures having unusual variations in step widths and heights due to complex tunneling paths. A triple-barrier tunnel-junction model accounts quantitatively for the experimental results.

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Single-electron tunneling effects in granular metal films

Abstract

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