Single-electron tunneling effects in granular metal films

E. Bar-Sadeh*, Y. Goldstein, C. Zhang, H. Deng, B. Abeles, O. Millo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

77 Scopus citations

Abstract

Cryogenic scanning tunneling microscopy is used to study local electrical-transport properties of thin granular Au/Al2O3 films in the vicinity of the percolation threshold. The current-voltage characteristics are found to vary dramatically from one tip position to another over distances of the order of a few nanometers. These characteristics often exhibit interesting Coulomb-staircase structures having unusual variations in step widths and heights due to complex tunneling paths. A triple-barrier tunnel-junction model accounts quantitatively for the experimental results.

Original languageAmerican English
Pages (from-to)8961-8964
Number of pages4
JournalPhysical Review B
Volume50
Issue number12
DOIs
StatePublished - 1994

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