TY - JOUR
T1 - Size and Emission Control of Wurtzite InP Nanocrystals Synthesized from Cu3-xP by Cation Exchange
AU - Stone, David
AU - Li, Xiang
AU - Naor, Tom
AU - Dai, Jiekai
AU - Remennik, Sergei
AU - Banin, Uri
N1 - Publisher Copyright:
© 2023 American Chemical Society.
PY - 2023/12/26
Y1 - 2023/12/26
N2 - Phosphide-based nanocrystals (NCs), including InP and Cu3-xP, are relevant for applications in light-emitting devices and catalysis, yet their synthetic design is limited in terms of size range and homogeneity. We report the synthesis of uniform and size-controlled emissive wurtzite-phase InP NCs formed via cation exchange from Cu3-xP. First, size-controlled Cu3-xP NCs are synthesized by the formation of metallic Cu0 NCs and their phosphidation to Cu3-xP. By changing the ligands and precursor concentrations, the NC size is varied between 5 and 13 nm. Using cation exchange, InP NCs are then generated. As the surface of InP NCs is prone to oxidation and defects that decrease their emission, we performed a reaction with NOBF4. This yields InP NCs with resolved absorption features and efficient band-gap emission as a result of impurity removal and surface passivation. The effect of water, acid, and halides on the balance of NC etching and surface passivation is studied. With this approach, high-quality wurtzite InP NCs are obtained while the emission is tuned between 810 and 600 nm. The obtained NCs are potential building blocks for catalytic and optoelectronic applications.
AB - Phosphide-based nanocrystals (NCs), including InP and Cu3-xP, are relevant for applications in light-emitting devices and catalysis, yet their synthetic design is limited in terms of size range and homogeneity. We report the synthesis of uniform and size-controlled emissive wurtzite-phase InP NCs formed via cation exchange from Cu3-xP. First, size-controlled Cu3-xP NCs are synthesized by the formation of metallic Cu0 NCs and their phosphidation to Cu3-xP. By changing the ligands and precursor concentrations, the NC size is varied between 5 and 13 nm. Using cation exchange, InP NCs are then generated. As the surface of InP NCs is prone to oxidation and defects that decrease their emission, we performed a reaction with NOBF4. This yields InP NCs with resolved absorption features and efficient band-gap emission as a result of impurity removal and surface passivation. The effect of water, acid, and halides on the balance of NC etching and surface passivation is studied. With this approach, high-quality wurtzite InP NCs are obtained while the emission is tuned between 810 and 600 nm. The obtained NCs are potential building blocks for catalytic and optoelectronic applications.
UR - http://www.scopus.com/inward/record.url?scp=85180076363&partnerID=8YFLogxK
U2 - 10.1021/acs.chemmater.3c02226
DO - 10.1021/acs.chemmater.3c02226
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AN - SCOPUS:85180076363
SN - 0897-4756
VL - 35
SP - 10594
EP - 10605
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 24
ER -