TY - JOUR
T1 - Size Dependence of Doping by a Vacancy Formation Reaction in Copper Sulfide Nanocrystals
AU - Elimelech, Orian
AU - Liu, Jing
AU - Plonka, Anna M.
AU - Frenkel, Anatoly I.
AU - Banin, Uri
N1 - Publisher Copyright:
© 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2017/8/21
Y1 - 2017/8/21
N2 - Doping of nanocrystals (NCs) is a key, yet underexplored, approach for tuning of the electronic properties of semiconductors. An important route for doping of NCs is by vacancy formation. The size and concentration dependence of doping was studied in copper(I) sulfide (Cu2S) NCs through a redox reaction with iodine molecules (I2), which formed vacancies accompanied by a localized surface plasmon response. X-ray spectroscopy and diffraction reveal transformation from Cu2S to Cu-depleted phases, along with CuI formation. Greater reaction efficiency was observed for larger NCs. This behavior is attributed to interplay of the vacancy formation energy, which decreases for smaller sized NCs, and the growth of CuI on the NC surface, which is favored on well-defined facets of larger NCs. This doping process allows tuning of the plasmonic properties of a semiconductor across a wide range of plasmonic frequencies by varying the size of NCs and the concentration of iodine. Controlled vacancy doping of NCs may be used to tune and tailor semiconductors for use in optoelectronic applications.
AB - Doping of nanocrystals (NCs) is a key, yet underexplored, approach for tuning of the electronic properties of semiconductors. An important route for doping of NCs is by vacancy formation. The size and concentration dependence of doping was studied in copper(I) sulfide (Cu2S) NCs through a redox reaction with iodine molecules (I2), which formed vacancies accompanied by a localized surface plasmon response. X-ray spectroscopy and diffraction reveal transformation from Cu2S to Cu-depleted phases, along with CuI formation. Greater reaction efficiency was observed for larger NCs. This behavior is attributed to interplay of the vacancy formation energy, which decreases for smaller sized NCs, and the growth of CuI on the NC surface, which is favored on well-defined facets of larger NCs. This doping process allows tuning of the plasmonic properties of a semiconductor across a wide range of plasmonic frequencies by varying the size of NCs and the concentration of iodine. Controlled vacancy doping of NCs may be used to tune and tailor semiconductors for use in optoelectronic applications.
KW - copper sulfide nanocrystals
KW - doping
KW - surface plasmon resonance
KW - vacancies
UR - http://www.scopus.com/inward/record.url?scp=85025109277&partnerID=8YFLogxK
U2 - 10.1002/anie.201702673
DO - 10.1002/anie.201702673
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C2 - 28639731
AN - SCOPUS:85025109277
SN - 1433-7851
VL - 56
SP - 10335
EP - 10340
JO - Angewandte Chemie - International Edition
JF - Angewandte Chemie - International Edition
IS - 35
ER -