Solar Cell Metallization by Laser Transfer of Metal Micro-droplets

Michael Zenou; Lee Baron; Amir Sa'Ar; Zvi Kotler

doi:10.1016/j.egypro.2015.03.298

Solar Cell Metallization by Laser Transfer of Metal Micro-droplets

Michael Zenou^*, Lee Baron, Amir Sa'Ar, Zvi Kotler

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

Laser Induced Forward Transfer (LIFT) enables a non-contact, mask-less and high-resolution/high-aspect ratio printing of various metals. However, the small gap between the donor (print head) and the acceptor (silicon wafer), which is typically <25 μm, limits its wider use in manufacturing. We demonstrate LIFT printing of metal micro-droplets from a gap larger than 100 μm to provide high quality electrical contacts to silicon. Post annealing process is not required as the contacts are formed instantaneously during the LIFT process. Printing aluminum contacts on p-type (resistivity of 10-30 Ω cm) and p⁺ type (0.01 Ω cm) Si substrates yields a specific contact resistance of 0.15 mΩ cm² and 0.03 mΩ cm² respectively. Finally, we demonstrate the use of LIFT metallization for serially connecting few vertical solar cells that are locally isolated by porous silicon.

Original language	English
Pages (from-to)	147-155
Number of pages	9
Journal	Energy Procedia
Volume	67
DOIs	https://doi.org/10.1016/j.egypro.2015.03.298
State	Published - 1 Apr 2015
Event	5th Workshop on Metallization for Crystalline Silicon Solar Cells, 2014 - Constance, Germany Duration: 20 Oct 2014 → 21 Oct 2014

Bibliographical note

Publisher Copyright:
© 2015 The Authors.

Keywords

high volatge solar cells
laser priting
solar cell metallizaion
vertical solar cell

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.egypro.2015.03.298

Cite this

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title = "Solar Cell Metallization by Laser Transfer of Metal Micro-droplets",

abstract = "Laser Induced Forward Transfer (LIFT) enables a non-contact, mask-less and high-resolution/high-aspect ratio printing of various metals. However, the small gap between the donor (print head) and the acceptor (silicon wafer), which is typically <25 μm, limits its wider use in manufacturing. We demonstrate LIFT printing of metal micro-droplets from a gap larger than 100 μm to provide high quality electrical contacts to silicon. Post annealing process is not required as the contacts are formed instantaneously during the LIFT process. Printing aluminum contacts on p-type (resistivity of 10-30 Ω cm) and p+ type (0.01 Ω cm) Si substrates yields a specific contact resistance of 0.15 mΩ cm2 and 0.03 mΩ cm2 respectively. Finally, we demonstrate the use of LIFT metallization for serially connecting few vertical solar cells that are locally isolated by porous silicon.",

keywords = "high volatge solar cells, laser priting, solar cell metallizaion, vertical solar cell",

author = "Michael Zenou and Lee Baron and Amir Sa'Ar and Zvi Kotler",

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AU - Zenou, Michael

AU - Baron, Lee

AU - Sa'Ar, Amir

AU - Kotler, Zvi

PY - 2015/4/1

Y1 - 2015/4/1

N2 - Laser Induced Forward Transfer (LIFT) enables a non-contact, mask-less and high-resolution/high-aspect ratio printing of various metals. However, the small gap between the donor (print head) and the acceptor (silicon wafer), which is typically <25 μm, limits its wider use in manufacturing. We demonstrate LIFT printing of metal micro-droplets from a gap larger than 100 μm to provide high quality electrical contacts to silicon. Post annealing process is not required as the contacts are formed instantaneously during the LIFT process. Printing aluminum contacts on p-type (resistivity of 10-30 Ω cm) and p+ type (0.01 Ω cm) Si substrates yields a specific contact resistance of 0.15 mΩ cm2 and 0.03 mΩ cm2 respectively. Finally, we demonstrate the use of LIFT metallization for serially connecting few vertical solar cells that are locally isolated by porous silicon.

AB - Laser Induced Forward Transfer (LIFT) enables a non-contact, mask-less and high-resolution/high-aspect ratio printing of various metals. However, the small gap between the donor (print head) and the acceptor (silicon wafer), which is typically <25 μm, limits its wider use in manufacturing. We demonstrate LIFT printing of metal micro-droplets from a gap larger than 100 μm to provide high quality electrical contacts to silicon. Post annealing process is not required as the contacts are formed instantaneously during the LIFT process. Printing aluminum contacts on p-type (resistivity of 10-30 Ω cm) and p+ type (0.01 Ω cm) Si substrates yields a specific contact resistance of 0.15 mΩ cm2 and 0.03 mΩ cm2 respectively. Finally, we demonstrate the use of LIFT metallization for serially connecting few vertical solar cells that are locally isolated by porous silicon.

KW - high volatge solar cells

KW - laser priting

KW - solar cell metallizaion

KW - vertical solar cell

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JO - Energy Procedia

JF - Energy Procedia

T2 - 5th Workshop on Metallization for Crystalline Silicon Solar Cells, 2014

Y2 - 20 October 2014 through 21 October 2014

ER -

Solar Cell Metallization by Laser Transfer of Metal Micro-droplets

Abstract

Bibliographical note

Keywords

UN SDGs

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