Solid-state exciplex formation. A mechanism of energy trapping in "uphill" doped crystals

G. E. Berkovic*, M. D. Cohen, Z. Ludmer

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Several examples of trapping of host electronic excitation energy by exciplex formation in "uphill" doped crystals (crystals containing only dopants of higher singlet excitation level than the host) are presented. The trapping mechanism in such systems is discussed. Exciplex formation in crystals is subject to the same electron donor-acceptor criteria as in solution, and requires no thermal activation or excess excitation energy. The exciplexes studied exhibit some structure in their low-temperature fluorescence.

Original languageEnglish
Pages (from-to)405-412
Number of pages8
JournalChemical Physics
Volume82
Issue number3
DOIs
StatePublished - 15 Dec 1983
Externally publishedYes

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