TY - JOUR
T1 - Solution-processable dithieno[3,2-b:2′,3′-d]thiophene derivatives for organic thin-film transistors and complementary-like inverters
AU - Ho, Dongil
AU - Jeon, Minseok
AU - Kim, Hyekyoung
AU - Gidron, Ori
AU - Kim, Choongik
AU - Seo, Sung Yong
N1 - Publisher Copyright:
© 2017 Elsevier B.V.
PY - 2018/1
Y1 - 2018/1
N2 - Solution-processable dithieno[3,2-b:2′,3′-d]thiophene (DTT) derivatives, 2,6-bis(phenylethynyl)dithieno[3,2-b:2′,3′-d]thiophene (BP-Et-DTT) and 2,6-bis(thiophen-2-ylethynyl)dithieno[3,2-b:2′,3′-d]thiophene (BT-Et-DTT) were synthesized and characterized as organic semiconductors for organic thin-film transistors (OTFTs). Thermal, optical, and electrochemical properties of the DTT-based semiconductors were investigated. The solution-sheared thin films based on DTT derivatives exhibited p-channel characteristics as an active layer in organic thin-film transistors. The highest hole mobility was 0.32 cm2 V−1s−1 based on BP-Et-DTT thin films. The thin films exhibited micrometer-sized crystalline fiber structures which were aligned along the shearing direction, resulting in fiber-alignment-induced charge-transport anisotropy. Furthermore, bulk heterojunction (BHJ) ambipolar transistors were fabricated with an optimized blending ratio of BP-Et-DTT and the representative n-channel semiconductor, PDIFCN2. Complementary-like inverters were fabricated based on the two identical ambipolar transistors, resulting in moderate voltage gains of up to 16.
AB - Solution-processable dithieno[3,2-b:2′,3′-d]thiophene (DTT) derivatives, 2,6-bis(phenylethynyl)dithieno[3,2-b:2′,3′-d]thiophene (BP-Et-DTT) and 2,6-bis(thiophen-2-ylethynyl)dithieno[3,2-b:2′,3′-d]thiophene (BT-Et-DTT) were synthesized and characterized as organic semiconductors for organic thin-film transistors (OTFTs). Thermal, optical, and electrochemical properties of the DTT-based semiconductors were investigated. The solution-sheared thin films based on DTT derivatives exhibited p-channel characteristics as an active layer in organic thin-film transistors. The highest hole mobility was 0.32 cm2 V−1s−1 based on BP-Et-DTT thin films. The thin films exhibited micrometer-sized crystalline fiber structures which were aligned along the shearing direction, resulting in fiber-alignment-induced charge-transport anisotropy. Furthermore, bulk heterojunction (BHJ) ambipolar transistors were fabricated with an optimized blending ratio of BP-Et-DTT and the representative n-channel semiconductor, PDIFCN2. Complementary-like inverters were fabricated based on the two identical ambipolar transistors, resulting in moderate voltage gains of up to 16.
KW - Complementary-like inverter
KW - Organic semiconductor
KW - Organic thin-film transistors
KW - Self-assembled monolayer
KW - dithieno[3,2-b:2′,3′-d]thiophene
UR - http://www.scopus.com/inward/record.url?scp=85034853622&partnerID=8YFLogxK
U2 - 10.1016/j.orgel.2017.11.023
DO - 10.1016/j.orgel.2017.11.023
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AN - SCOPUS:85034853622
SN - 1566-1199
VL - 52
SP - 356
EP - 363
JO - Organic Electronics
JF - Organic Electronics
ER -