Space-charge layers and surface states in p-type crystalline silicon

A. Ramírez-Porras*, A. Many, Y. Goldstein, S. Z. Weisz

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Pulse measurements on the silicon/electrolyte interface have been used to study space-charge layers and surface states on the (100) faces of p-type silicon. The techniques used enable both the creation and study of space-charge layers at the semiconductor surface, ranging from large-depletion to strong-accumulation conditions. They also permit a straightforward separation of the different components of the induced charge at the silicon/electrolyte interface, so as to yield the variation of both the free-electron density in the space-charge layer and the density of occupied surface states with barrier height. The measured space-charge characteristics are in very good agreement with theory. The data in strong-accumulation layers indicate the presence of an insulating buffer layer (such as an oxide), 3-4 monolayers thick. As to surface states, we find that for CP-4-etched silicon, a distribution of states exists ∼ 0.34 eV above the valence-band edge, with total density ∼ 6 x 1011 cm-2.

Original languageEnglish
Pages (from-to)1773-1777
Number of pages5
JournalSurface Review and Letters
Volume9
Issue number5-6
DOIs
StatePublished - 2002

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