TY - JOUR
T1 - Space-charge layers and surface states in p-type crystalline silicon
AU - Ramírez-Porras, A.
AU - Many, A.
AU - Goldstein, Y.
AU - Weisz, S. Z.
PY - 2002
Y1 - 2002
N2 - Pulse measurements on the silicon/electrolyte interface have been used to study space-charge layers and surface states on the (100) faces of p-type silicon. The techniques used enable both the creation and study of space-charge layers at the semiconductor surface, ranging from large-depletion to strong-accumulation conditions. They also permit a straightforward separation of the different components of the induced charge at the silicon/electrolyte interface, so as to yield the variation of both the free-electron density in the space-charge layer and the density of occupied surface states with barrier height. The measured space-charge characteristics are in very good agreement with theory. The data in strong-accumulation layers indicate the presence of an insulating buffer layer (such as an oxide), 3-4 monolayers thick. As to surface states, we find that for CP-4-etched silicon, a distribution of states exists ∼ 0.34 eV above the valence-band edge, with total density ∼ 6 x 1011 cm-2.
AB - Pulse measurements on the silicon/electrolyte interface have been used to study space-charge layers and surface states on the (100) faces of p-type silicon. The techniques used enable both the creation and study of space-charge layers at the semiconductor surface, ranging from large-depletion to strong-accumulation conditions. They also permit a straightforward separation of the different components of the induced charge at the silicon/electrolyte interface, so as to yield the variation of both the free-electron density in the space-charge layer and the density of occupied surface states with barrier height. The measured space-charge characteristics are in very good agreement with theory. The data in strong-accumulation layers indicate the presence of an insulating buffer layer (such as an oxide), 3-4 monolayers thick. As to surface states, we find that for CP-4-etched silicon, a distribution of states exists ∼ 0.34 eV above the valence-band edge, with total density ∼ 6 x 1011 cm-2.
UR - http://www.scopus.com/inward/record.url?scp=0036773134&partnerID=8YFLogxK
U2 - 10.1142/s0218625x02004396
DO - 10.1142/s0218625x02004396
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AN - SCOPUS:0036773134
SN - 0218-625X
VL - 9
SP - 1773
EP - 1777
JO - Surface Review and Letters
JF - Surface Review and Letters
IS - 5-6
ER -