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Space-charge layers and surface states in p-type crystalline silicon
A. Ramírez-Porras
*
, A. Many
,
Y. Goldstein
, S. Z. Weisz
*
Corresponding author for this work
Racah Institute of Physics
Research output
:
Contribution to journal
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Article
›
peer-review
1
Scopus citations
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Keyphrases
Accumulation Condition
25%
Accumulation Layer
25%
Barrier Height
25%
Buffer Layer
25%
Charged Surface
100%
Crystalline Silicon
100%
Electrolyte Interface
50%
Etched Silicon
25%
Free Electron Density
25%
Induced Charge
25%
Oxides
25%
P-type
100%
Pulse Measurements
25%
Semiconductor Surface
25%
Simple Separation
25%
Space Charge Characteristics
25%
Space Charge Layer
100%
Surface States
100%
Valence Band Edge
25%
Engineering
Band Edge
20%
Barrier Height
20%
Buffer Layer
20%
Carrier Concentration
20%
Crystalline Silicon
100%
Electrolyte Interface
40%
Free Electron
20%
Good Agreement
20%
Induced Charge
20%
Layer State
100%
Monolayers
20%
Semiconductor Surface
20%
Space Charge
100%
Surface State
100%
Valence Band
20%
Material Science
Buffer Layer
20%
Carrier Concentration
20%
Density
40%
Monolayers
20%
Oxide Compound
20%
Silicon
100%
Surface (Surface Science)
100%
Physics
Electron Density
20%
Free Electron
20%
Space Charge
100%