Space charge layers at the porous silicon surface

S. Z. Weisz; J. Avalos; M. Gomez; A. Many; Y. Goldstein; E. Savir

doi:10.1557/proc-378-899

Space charge layers at the porous silicon surface

S. Z. Weisz^*
, J. Avalos
, M. Gomez
, A. Many
, Y. Goldstein
, E. Savir

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

Pulse measurements on the porous-Si/electrolyte system are used to determine the surface effective area and the surface-state density at various stages of the anodization process used to produce the porous material. The measurements are combined with studies of the luminescence spectra and scanning tunneling microscopy. Preliminary results indicate that for 1-2 minute anodization, the roughness scale is of the order of 1-2 nm. On the other hand, after 10 minutes anodization the roughness microstructure becomes finer. These findings indicates that the various characteristics studied are closely interrelated.

Original language	English
Pages (from-to)	899-904
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	378
DOIs	https://doi.org/10.1557/proc-378-899
State	Published - 1995
Externally published	Yes
Event	Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA Duration: 17 Apr 1995 → 21 Apr 1995

Access to Document

10.1557/proc-378-899

Cite this

@article{f88e03b204864059b96893c35f9d50c9,

title = "Space charge layers at the porous silicon surface",

abstract = "Pulse measurements on the porous-Si/electrolyte system are used to determine the surface effective area and the surface-state density at various stages of the anodization process used to produce the porous material. The measurements are combined with studies of the luminescence spectra and scanning tunneling microscopy. Preliminary results indicate that for 1-2 minute anodization, the roughness scale is of the order of 1-2 nm. On the other hand, after 10 minutes anodization the roughness microstructure becomes finer. These findings indicates that the various characteristics studied are closely interrelated.",

author = "Weisz, \{S. Z.\} and J. Avalos and M. Gomez and A. Many and Y. Goldstein and E. Savir",

year = "1995",

doi = "10.1557/proc-378-899",

language = "אנגלית",

volume = "378",

pages = "899--904",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Spring Meeting ; Conference date: 17-04-1995 Through 21-04-1995",

}

TY - JOUR

T1 - Space charge layers at the porous silicon surface

AU - Weisz, S. Z.

AU - Avalos, J.

AU - Gomez, M.

AU - Many, A.

AU - Goldstein, Y.

AU - Savir, E.

PY - 1995

Y1 - 1995

N2 - Pulse measurements on the porous-Si/electrolyte system are used to determine the surface effective area and the surface-state density at various stages of the anodization process used to produce the porous material. The measurements are combined with studies of the luminescence spectra and scanning tunneling microscopy. Preliminary results indicate that for 1-2 minute anodization, the roughness scale is of the order of 1-2 nm. On the other hand, after 10 minutes anodization the roughness microstructure becomes finer. These findings indicates that the various characteristics studied are closely interrelated.

AB - Pulse measurements on the porous-Si/electrolyte system are used to determine the surface effective area and the surface-state density at various stages of the anodization process used to produce the porous material. The measurements are combined with studies of the luminescence spectra and scanning tunneling microscopy. Preliminary results indicate that for 1-2 minute anodization, the roughness scale is of the order of 1-2 nm. On the other hand, after 10 minutes anodization the roughness microstructure becomes finer. These findings indicates that the various characteristics studied are closely interrelated.

UR - https://www.scopus.com/pages/publications/0029529820

U2 - 10.1557/proc-378-899

DO - 10.1557/proc-378-899

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.conferencearticle???

AN - SCOPUS:0029529820

SN - 0272-9172

VL - 378

SP - 899

EP - 904

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1995 MRS Spring Meeting

Y2 - 17 April 1995 through 21 April 1995

ER -

Space charge layers at the porous silicon surface

Abstract

Access to Document

Other files and links

Fingerprint

Cite this