Spin and quantum interference effects in hopping conductivity

A. Frydman; Zvi Ovadyahu

doi:10.1016/0038-1098(95)00141-7

Spin and quantum interference effects in hopping conductivity

A. Frydman^*
, Zvi Ovadyahu

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

We present results of high field magnetoconductance (MC) measurements on In₂O_3-x films in the hopping regime. For relatively weak disorder, a purely positive MC is observed. With growing disorder, the MC acquires a negative component that tends to saturate at high fields. The data for the latter case are consistent with the co-existence of two mechanisms for MC; an isotropic, spin-alignment mechanism and an anisotropic, quantum-interference one.

Original language	English
Pages (from-to)	745-749
Number of pages	5
Journal	Solid State Communications
Volume	94
Issue number	9
DOIs	https://doi.org/10.1016/0038-1098(95)00141-7
State	Published - Jun 1995

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@article{71b77ec74a414ca4ae5e547f4f11754b,

title = "Spin and quantum interference effects in hopping conductivity",

abstract = "We present results of high field magnetoconductance (MC) measurements on In2O3-x films in the hopping regime. For relatively weak disorder, a purely positive MC is observed. With growing disorder, the MC acquires a negative component that tends to saturate at high fields. The data for the latter case are consistent with the co-existence of two mechanisms for MC; an isotropic, spin-alignment mechanism and an anisotropic, quantum-interference one.",

author = "A. Frydman and Zvi Ovadyahu",

year = "1995",

month = jun,

doi = "10.1016/0038-1098(95)00141-7",

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journal = "Solid State Communications",

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AU - Frydman, A.

AU - Ovadyahu, Zvi

PY - 1995/6

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N2 - We present results of high field magnetoconductance (MC) measurements on In2O3-x films in the hopping regime. For relatively weak disorder, a purely positive MC is observed. With growing disorder, the MC acquires a negative component that tends to saturate at high fields. The data for the latter case are consistent with the co-existence of two mechanisms for MC; an isotropic, spin-alignment mechanism and an anisotropic, quantum-interference one.

AB - We present results of high field magnetoconductance (MC) measurements on In2O3-x films in the hopping regime. For relatively weak disorder, a purely positive MC is observed. With growing disorder, the MC acquires a negative component that tends to saturate at high fields. The data for the latter case are consistent with the co-existence of two mechanisms for MC; an isotropic, spin-alignment mechanism and an anisotropic, quantum-interference one.

UR - https://www.scopus.com/pages/publications/0029321564

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DO - 10.1016/0038-1098(95)00141-7

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AN - SCOPUS:0029321564

SN - 0038-1098

VL - 94

SP - 745

EP - 749

JO - Solid State Communications

JF - Solid State Communications

IS - 9

ER -

Spin and quantum interference effects in hopping conductivity

Abstract

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