Spin-memory effect and negative magnetoresistance in hopping conductivity

Oded Agam*, Igor L. Aleiner, Boris Spivak

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


We propose a mechanism for negative isotropic magnetoresistance in the hopping regime. It results from a memory effect encrypted into spin correlations that are not taken into account by the conventional theory of hopping conductivity. The spin correlations are generated by the nonequilibrium electric currents and lead to the decrease of the conductivity. The application of the magnetic field destroys the correlations thus enhancing the conductance. This effect can occur even at magnetic fields as small as a few gauss.

Original languageAmerican English
Article number100201
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number10
StatePublished - 17 Mar 2014


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