Spontaneous emission by ballistic electrons in semiconducting heterostructures

M. Botton*, A. Ron

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We investigate the spontaneous emission by electrons traversing ballistically a superlattice in semiconducting heterostructures. It is found that for an injected current of 100 μA into a 5 × 20 μm2 device there are about 5 × 108/s infra-red photons emitted, mostly perpendicular to the electrons direction of motion. We also estimate the gain of the structure, and find that stimulated emission occurs when the threshold current density is of order 104 A/cm2.

Original languageAmerican English
Pages (from-to)1131-1135
Number of pages5
JournalSolid State Communications
Volume71
Issue number12
DOIs
StatePublished - Sep 1989
Externally publishedYes

Bibliographical note

Funding Information:
Acknowledgements - One of use (AR) wishes to acknowledge Dr P.M. Platzman for introducing him to the ballistic electrons devices, Dr M. Heiblum for his patience offering many advices, and to Dr E. Cohen and Dr Arza Ron for many stimulating discussions. This work was supported by the fund for Encouragement of Research at the Technion and by the Israeli Academy of Sciences and Humanities.

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