Abstract
We investigate the spontaneous emission by electrons traversing ballistically a superlattice in semiconducting heterostructures. It is found that for an injected current of 100 μA into a 5 × 20 μm2 device there are about 5 × 108/s infra-red photons emitted, mostly perpendicular to the electrons direction of motion. We also estimate the gain of the structure, and find that stimulated emission occurs when the threshold current density is of order 104 A/cm2.
Original language | English |
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Pages (from-to) | 1131-1135 |
Number of pages | 5 |
Journal | Solid State Communications |
Volume | 71 |
Issue number | 12 |
DOIs | |
State | Published - Sep 1989 |
Externally published | Yes |
Bibliographical note
Funding Information:Acknowledgements - One of use (AR) wishes to acknowledge Dr P.M. Platzman for introducing him to the ballistic electrons devices, Dr M. Heiblum for his patience offering many advices, and to Dr E. Cohen and Dr Arza Ron for many stimulating discussions. This work was supported by the fund for Encouragement of Research at the Technion and by the Israeli Academy of Sciences and Humanities.