Abstract
The aging process of silicon nanostructures obtained by magnetron sputtering and electrochemical etching is investigated by photoluminescence and Raman scattering methods. It is shown that oxidation of silicon crystallites takes place in both types of structures and results in appearance of additional emission bands. However the degree of oxidation in etched structures exceeds significantly this value for sputtered samples. It is found that the intensity and spectral position of the emission band caused by exciton recombination in Si crystallites do not change practically during aging in sputtered structures in contrast to etched ones. It is shown that the oxidation of silicon amorphous phase occur during aging in sputtered structures.
Original language | English |
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Title of host publication | Gettering and Defect Engineering in Semiconductor Technology XI - GADEST 2005 |
Editors | B. Pichaud, A. Claverie, D. Alquier, H. Richter, M. Kittler, H. Richter, M. Kittler |
Publisher | Trans Tech Publications Ltd |
Pages | 59-64 |
Number of pages | 6 |
ISBN (Print) | 9783908451136 |
DOIs | |
State | Published - 2005 |
Event | 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2005 - Giens, Marseilles, France Duration: 25 Sep 2005 → 30 Sep 2005 |
Publication series
Name | Solid State Phenomena |
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Volume | 108-109 |
ISSN (Print) | 1012-0394 |
ISSN (Electronic) | 1662-9779 |
Conference
Conference | 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2005 |
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Country/Territory | France |
City | Giens, Marseilles |
Period | 25/09/05 → 30/09/05 |
Bibliographical note
Publisher Copyright:© (2005) Trans Tech Publications, Switzerland.
Keywords
- Defects
- Light emission
- Silicon nanostructures
- Stability