@inproceedings{ec487498d0a543df8824abd207aa1235,
title = "Stability of emission properties of silicon nanostructures",
abstract = "The aging process of silicon nanostructures obtained by magnetron sputtering and electrochemical etching is investigated by photoluminescence and Raman scattering methods. It is shown that oxidation of silicon crystallites takes place in both types of structures and results in appearance of additional emission bands. However the degree of oxidation in etched structures exceeds significantly this value for sputtered samples. It is found that the intensity and spectral position of the emission band caused by exciten recombination in Si crystallites do not change practically during aging in sputtered structures in contrast to etched ones. It is shown that the oxidation of silicon amorphous phase occur during aging in sputtered structures.",
keywords = "Defects, Light emission, Silicon nanostructures, Stability",
author = "M. Baran and L. Khomenkova and N. Korsunska and T. Stara and M. Sheinkman and V. Yukhymchuk and V. Khomenkov and Y. Goldstein and J. Jedrzejewski and E. Savir",
year = "2005",
doi = "10.4028/3-908451-13-2.59",
language = "אנגלית",
isbn = "3908451132",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
pages = "59--64",
booktitle = "Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting",
note = "11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005 ; Conference date: 25-09-2005 Through 30-09-2005",
}