State distribution and ambipolar diffusion length in n-type hydrogenated amorphous silicon

I. Balberg; S. Z. Weisz

doi:10.1063/1.343908

State distribution and ambipolar diffusion length in n-type hydrogenated amorphous silicon

I. Balberg^*, S. Z. Weisz

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Measurements of the deep state distribution and the ambipolar diffusion length were carried out on the same n-type a-Si:H materials. It was found that the concentration of active recombination centers [D^-] is proportional to N^1/2_P, where N_P is the total concentration of deep states. This result indicates that states other than D^- states are present around the midgap of P-doped materials, and that the other states are probably associated with donor-D^- pairs.

Original language	English
Pages (from-to)	215-218
Number of pages	4
Journal	Journal of Applied Physics
Volume	66
Issue number	1
DOIs	https://doi.org/10.1063/1.343908
State	Published - 1989

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abstract = "Measurements of the deep state distribution and the ambipolar diffusion length were carried out on the same n-type a-Si:H materials. It was found that the concentration of active recombination centers [D-] is proportional to N1/2P, where NP is the total concentration of deep states. This result indicates that states other than D- states are present around the midgap of P-doped materials, and that the other states are probably associated with donor-D- pairs.",

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AB - Measurements of the deep state distribution and the ambipolar diffusion length were carried out on the same n-type a-Si:H materials. It was found that the concentration of active recombination centers [D-] is proportional to N1/2P, where NP is the total concentration of deep states. This result indicates that states other than D- states are present around the midgap of P-doped materials, and that the other states are probably associated with donor-D- pairs.

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State distribution and ambipolar diffusion length in n-type hydrogenated amorphous silicon

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