Stimulated emission by ballistic electrons in semiconducting superlattices

Mordechai Botton; Amiram Ron

doi:10.1109/EEIS.1989.720185

Stimulated emission by ballistic electrons in semiconducting superlattices

Research output: Contribution to conference › Paper › peer-review

Abstract

The spontaneous emission by ballistic electrons which traverse a super lattice yields as many as 5·10⁸/sec IR photons for an injected current of 100μA into a 5×20μm² device. Based on this result we obtain the rate of stimulated emission and the gain of an electromagnetic wave. We find that the threshold current density for net wave amplification is about 10⁴AA/cm². An analysis of the device as a traveling wave amplifier and an oscillator is also presented.

Original language	English
DOIs	https://doi.org/10.1109/EEIS.1989.720185
State	Published - 1989
Externally published	Yes
Event	16th Conference of Electrical and Electronics Engineers in Israel, EEIS 1989 - Tel-Aviv, Israel Duration: 7 Mar 1989 → 9 Mar 1989

Conference

Conference	16th Conference of Electrical and Electronics Engineers in Israel, EEIS 1989
Country/Territory	Israel
City	Tel-Aviv
Period	7/03/89 → 9/03/89

Bibliographical note

Publisher Copyright:
© 1990 IEEE.

Access to Document

10.1109/EEIS.1989.720185

Cite this

@conference{50b1a218ab0e41ed9bf7eb96ff0d79cb,

title = "Stimulated emission by ballistic electrons in semiconducting superlattices",

abstract = "The spontaneous emission by ballistic electrons which traverse a super lattice yields as many as 5·108/sec IR photons for an injected current of 100μA into a 5×20μm2 device. Based on this result we obtain the rate of stimulated emission and the gain of an electromagnetic wave. We find that the threshold current density for net wave amplification is about 104AA/cm2. An analysis of the device as a traveling wave amplifier and an oscillator is also presented.",

author = "Mordechai Botton and Amiram Ron",

note = "Publisher Copyright: {\textcopyright} 1990 IEEE.; 16th Conference of Electrical and Electronics Engineers in Israel, EEIS 1989 ; Conference date: 07-03-1989 Through 09-03-1989",

year = "1989",

doi = "10.1109/EEIS.1989.720185",

language = "אנגלית",

}

TY - CONF

T1 - Stimulated emission by ballistic electrons in semiconducting superlattices

AU - Botton, Mordechai

AU - Ron, Amiram

PY - 1989

Y1 - 1989

N2 - The spontaneous emission by ballistic electrons which traverse a super lattice yields as many as 5·108/sec IR photons for an injected current of 100μA into a 5×20μm2 device. Based on this result we obtain the rate of stimulated emission and the gain of an electromagnetic wave. We find that the threshold current density for net wave amplification is about 104AA/cm2. An analysis of the device as a traveling wave amplifier and an oscillator is also presented.

AB - The spontaneous emission by ballistic electrons which traverse a super lattice yields as many as 5·108/sec IR photons for an injected current of 100μA into a 5×20μm2 device. Based on this result we obtain the rate of stimulated emission and the gain of an electromagnetic wave. We find that the threshold current density for net wave amplification is about 104AA/cm2. An analysis of the device as a traveling wave amplifier and an oscillator is also presented.

UR - http://www.scopus.com/inward/record.url?scp=85067361265&partnerID=8YFLogxK

U2 - 10.1109/EEIS.1989.720185

DO - 10.1109/EEIS.1989.720185

M3 - ???researchoutput.researchoutputtypes.contributiontoconference.paper???

AN - SCOPUS:85067361265

T2 - 16th Conference of Electrical and Electronics Engineers in Israel, EEIS 1989

Y2 - 7 March 1989 through 9 March 1989

ER -

Stimulated emission by ballistic electrons in semiconducting superlattices

Abstract

Conference

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this