Abstract
Using the model of an infinite well we have performed detailed calculations of the valence-band structure and for the first time obtained analytic expressions for wave functions in a strained quantum well. In-plane effective masses and energy separations are calculated for different thicknesses of InGaAs wells and In mole fractions in the range of 0 to 0.50. Based on the calculations we estimate the optimal thickness of the well and In mole fraction for which the energy separation between the lowest two subbands has a maximum and the InGaAs layer is stable with respect to misfit dislocations. The results provide useful guidelines for the optimization of strained p-channel field-effect transistors.
Original language | English |
---|---|
Pages (from-to) | 1531-1538 |
Number of pages | 8 |
Journal | Journal of Applied Physics |
Volume | 70 |
Issue number | 3 |
DOIs | |
State | Published - 1991 |
Externally published | Yes |