Abstract
Epitaxial growth in a CdS/HgS heterostructure of nanometer dimensions, prepared by methods of wet chemistry, is demonstrated. High-resolution transmission-electron microscopy is used to determine the shape and crystallinity of this system consisting of a quantum well in a quantum dot. The homogeneous absorption and fluorescence spectra are investigated by transient hole burning and fluorescence line-narrowing spectroscopy. The photophysical measurements provide evidence for charge-carrier localization within the HgS well.
Original language | English |
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Pages (from-to) | R13242-R13245 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 53 |
Issue number | 20 |
DOIs | |
State | Published - 1996 |
Externally published | Yes |