TY - JOUR
T1 - Structure and light emission of Si-rich Al2O3 and Si-rich-SiO2 nanocomposites
AU - Khomenkova, L.
AU - Kolomys, O.
AU - Baran, M.
AU - Kuchuk, A.
AU - Strelchuk, V.
AU - Venger, Ye
AU - Kladko, V.
AU - Jedrzejewski, J.
AU - Balberg, I.
AU - Korsunska, N.
PY - 2014/8/1
Y1 - 2014/8/1
N2 - This work presents the comparative investigation of Six(Al 2O3)1-x and Six(SiO 2)1-x films with different excess Si content, x, grown by RF magnetron sputtering. Their properties were investigated by means of Raman scattering, X-ray diffraction, Electron paramagnetic resonance and photoluminescence methods. As-deposited films with the x ≥ 0.3 were found to be two-phase systems that contained an amorphous Si phase. Contrary to Si x(SiO2)1-x films, tensile stresses were observed for Six(Al2O3)1- x samples due to lattice mismatch between the film and quartz substrate. The Si nanocrystals (Si-ncs) were formed upon annealing at 1150 °C for 30 min in nitrogen flow in both types of samples. Along with this, for the films with the x > 0.3, amorphous Si phase was also detected, but its contribution was smaller in the Six(Al2O 3)1-x films. Besides, the Si-ncs embedded in Al2O3 host remained under tensile stresses after annealing. For the films with the same x values, the Si-ncs in Al 2O3 were found to be larger than those embedded in SiO2. Photoluminescence spectra showed that the main radiative channel in Six(SiO2)1-x films is exciton recombination in Si-ncs, while in Six(Al2O3) 1-x films the defect related emission prevails due to higher amount of interface defects in the Six(Al2O 3)1-x. The nature of these defects is discussed.
AB - This work presents the comparative investigation of Six(Al 2O3)1-x and Six(SiO 2)1-x films with different excess Si content, x, grown by RF magnetron sputtering. Their properties were investigated by means of Raman scattering, X-ray diffraction, Electron paramagnetic resonance and photoluminescence methods. As-deposited films with the x ≥ 0.3 were found to be two-phase systems that contained an amorphous Si phase. Contrary to Si x(SiO2)1-x films, tensile stresses were observed for Six(Al2O3)1- x samples due to lattice mismatch between the film and quartz substrate. The Si nanocrystals (Si-ncs) were formed upon annealing at 1150 °C for 30 min in nitrogen flow in both types of samples. Along with this, for the films with the x > 0.3, amorphous Si phase was also detected, but its contribution was smaller in the Six(Al2O 3)1-x films. Besides, the Si-ncs embedded in Al2O3 host remained under tensile stresses after annealing. For the films with the same x values, the Si-ncs in Al 2O3 were found to be larger than those embedded in SiO2. Photoluminescence spectra showed that the main radiative channel in Six(SiO2)1-x films is exciton recombination in Si-ncs, while in Six(Al2O3) 1-x films the defect related emission prevails due to higher amount of interface defects in the Six(Al2O 3)1-x. The nature of these defects is discussed.
KW - Electron paramagnetic resonance
KW - Photoluminescence
KW - RF magnetron sputtering
KW - Raman scattering
KW - Silicon nanoclusters
UR - https://www.scopus.com/pages/publications/84901983121
U2 - 10.1016/j.mee.2013.12.001
DO - 10.1016/j.mee.2013.12.001
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AN - SCOPUS:84901983121
SN - 0167-9317
VL - 125
SP - 62
EP - 67
JO - Microelectronic Engineering
JF - Microelectronic Engineering
ER -