Structure and optical properties of magnetron-sputtered SiOx layers with silicon nanoparticles

L. Khomenkova*, N. Korsunska, T. Stara, Y. Goldstein, J. Jedrzejewski, E. Savir, C. Sada, Yu Emirov

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The properties of SiOxlayer prepared by magnetron sputtering is studied by photoluminescence Auger and SIMS methods. The depth distribution of emission characteristics and chemical composition is obtained. It is shown that as-sputtered SiOx layers are non-emitted and characterized by homogeneous enough chemical composition. High-temperature annealing in nitrogen atmosphere stimulates not only the Si nanocrystal formation but also the redistribution of silicon and the appearance of Si depleted region near layer-substrate interface. The last process is found to be dependent on excess Si content. It is found that decrease of silicon content in the depth of annealed layers is followed by the decrease of particle sizes that is proved by the blue shift of photoluminescence maximum. The possible reasons of the appearance of Si depleted region are discussed.

Original languageEnglish
Title of host publicationDefects and Diffusion in Semiconductors XII
PublisherTrans Tech Publications Ltd
Pages7-19
Number of pages13
Volume303-304
ISBN (Print)3908451876, 9783908451877
DOIs
StatePublished - 2010

Keywords

  • Atomic force microscopy
  • Raman scattering
  • Si nanoparticles

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