Structure of droplet-epitaxy-grown InAs/GaAs quantum dots

Eyal Cohen*, Shira Yochelis, Ohad Westreich, Sergey Shusterman, Divine P. Kumah, Roy Clarke, Yizhak Yacoby, Yossi Paltiel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


We have used a direct x-ray phasing method, coherent Bragg rod analysis, to obtain sub-angstrom resolution electron density maps of the InAs/GaAs dot system. The dots were grown by the droplet heteroepitaxy (DHE) technique and their structural and compositional properties are compared with those of dots grown by the strain-driven Stranski-Krastanov method. Our results show that the Ga diffusion into the DHE-grown dots is somewhat larger; however, other characteristics such as the composition of the dots' uppermost layers, the interlayer spacing, and the bowing of the atomic layers are similar.

Original languageAmerican English
Article number243115
JournalApplied Physics Letters
Issue number24
StatePublished - 13 Jun 2011

Bibliographical note

Funding Information:
This work was supported by the U.S. National Science Foundation under Grant No. DMR-0906909. Use of the Advanced Photon Source, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science by Argonne National Laboratory, was supported by the U.S. DOE under Contract No. DE-AC02-06CH11357.


Dive into the research topics of 'Structure of droplet-epitaxy-grown InAs/GaAs quantum dots'. Together they form a unique fingerprint.

Cite this