Structure of droplet-epitaxy-grown InAs/GaAs quantum dots

Eyal Cohen; Shira Yochelis; Ohad Westreich; Sergey Shusterman; Divine P. Kumah; Roy Clarke; Yizhak Yacoby; Yossi Paltiel

doi:10.1063/1.3599063

Structure of droplet-epitaxy-grown InAs/GaAs quantum dots

Eyal Cohen^*, Shira Yochelis, Ohad Westreich, Sergey Shusterman, Divine P. Kumah, Roy Clarke, Yizhak Yacoby, Yossi Paltiel

^*Corresponding author for this work

Department of Applied Physics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We have used a direct x-ray phasing method, coherent Bragg rod analysis, to obtain sub-angstrom resolution electron density maps of the InAs/GaAs dot system. The dots were grown by the droplet heteroepitaxy (DHE) technique and their structural and compositional properties are compared with those of dots grown by the strain-driven Stranski-Krastanov method. Our results show that the Ga diffusion into the DHE-grown dots is somewhat larger; however, other characteristics such as the composition of the dots' uppermost layers, the interlayer spacing, and the bowing of the atomic layers are similar.

Original language	English
Article number	243115
Journal	Applied Physics Letters
Volume	98
Issue number	24
DOIs	https://doi.org/10.1063/1.3599063
State	Published - 13 Jun 2011

Bibliographical note

Funding Information:
This work was supported by the U.S. National Science Foundation under Grant No. DMR-0906909. Use of the Advanced Photon Source, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science by Argonne National Laboratory, was supported by the U.S. DOE under Contract No. DE-AC02-06CH11357.

Access to Document

10.1063/1.3599063

Cite this

@article{717d478702ce473e8359aed4a1cd1849,

title = "Structure of droplet-epitaxy-grown InAs/GaAs quantum dots",

abstract = "We have used a direct x-ray phasing method, coherent Bragg rod analysis, to obtain sub-angstrom resolution electron density maps of the InAs/GaAs dot system. The dots were grown by the droplet heteroepitaxy (DHE) technique and their structural and compositional properties are compared with those of dots grown by the strain-driven Stranski-Krastanov method. Our results show that the Ga diffusion into the DHE-grown dots is somewhat larger; however, other characteristics such as the composition of the dots' uppermost layers, the interlayer spacing, and the bowing of the atomic layers are similar.",

author = "Eyal Cohen and Shira Yochelis and Ohad Westreich and Sergey Shusterman and Kumah, {Divine P.} and Roy Clarke and Yizhak Yacoby and Yossi Paltiel",

note = "Funding Information: This work was supported by the U.S. National Science Foundation under Grant No. DMR-0906909. Use of the Advanced Photon Source, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science by Argonne National Laboratory, was supported by the U.S. DOE under Contract No. DE-AC02-06CH11357.",

year = "2011",

month = jun,

day = "13",

doi = "10.1063/1.3599063",

language = "אנגלית",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

}

TY - JOUR

T1 - Structure of droplet-epitaxy-grown InAs/GaAs quantum dots

AU - Cohen, Eyal

AU - Yochelis, Shira

AU - Westreich, Ohad

AU - Shusterman, Sergey

AU - Kumah, Divine P.

AU - Clarke, Roy

AU - Yacoby, Yizhak

AU - Paltiel, Yossi

N1 - Funding Information: This work was supported by the U.S. National Science Foundation under Grant No. DMR-0906909. Use of the Advanced Photon Source, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science by Argonne National Laboratory, was supported by the U.S. DOE under Contract No. DE-AC02-06CH11357.

PY - 2011/6/13

Y1 - 2011/6/13

N2 - We have used a direct x-ray phasing method, coherent Bragg rod analysis, to obtain sub-angstrom resolution electron density maps of the InAs/GaAs dot system. The dots were grown by the droplet heteroepitaxy (DHE) technique and their structural and compositional properties are compared with those of dots grown by the strain-driven Stranski-Krastanov method. Our results show that the Ga diffusion into the DHE-grown dots is somewhat larger; however, other characteristics such as the composition of the dots' uppermost layers, the interlayer spacing, and the bowing of the atomic layers are similar.

AB - We have used a direct x-ray phasing method, coherent Bragg rod analysis, to obtain sub-angstrom resolution electron density maps of the InAs/GaAs dot system. The dots were grown by the droplet heteroepitaxy (DHE) technique and their structural and compositional properties are compared with those of dots grown by the strain-driven Stranski-Krastanov method. Our results show that the Ga diffusion into the DHE-grown dots is somewhat larger; however, other characteristics such as the composition of the dots' uppermost layers, the interlayer spacing, and the bowing of the atomic layers are similar.

UR - http://www.scopus.com/inward/record.url?scp=79960572785&partnerID=8YFLogxK

U2 - 10.1063/1.3599063

DO - 10.1063/1.3599063

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:79960572785

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 243115

ER -

Structure of droplet-epitaxy-grown InAs/GaAs quantum dots

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this