Study of silicon etching in HBr solutions using a scanning electrochemical microscope

Sheffer Meltzer; Daniel Mandler

doi:10.1039/FT9959101019

Study of silicon etching in HBr solutions using a scanning electrochemical microscope

Sheffer Meltzer, Daniel Mandler^*

^*Corresponding author for this work

Institute of Chemistry

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

The etching of silicon has been studied by the scanning electrochemical microscope (SECM) technique. Etching has been accomplished in acidic fluoride solutions by electrogenerating a strong oxidant, i.e. bromine in this case, at an ultramicroelectrode which was held closely above a silicon 〈111〉 wafer. The parameters that affect the process and control the efficiency of the silicon etching were examined. A detailed mechanism of the process, which was derived from the unique advantages of the SECM and is in agreement with previous reports, is proposed.

Original language	American English
Pages (from-to)	1019-1024
Number of pages	6
Journal	Physical Chemistry Chemical Physics
Volume	91
Issue number	6
DOIs	https://doi.org/10.1039/FT9959101019
State	Published - 1995

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title = "Study of silicon etching in HBr solutions using a scanning electrochemical microscope",

abstract = "The etching of silicon has been studied by the scanning electrochemical microscope (SECM) technique. Etching has been accomplished in acidic fluoride solutions by electrogenerating a strong oxidant, i.e. bromine in this case, at an ultramicroelectrode which was held closely above a silicon 〈111〉 wafer. The parameters that affect the process and control the efficiency of the silicon etching were examined. A detailed mechanism of the process, which was derived from the unique advantages of the SECM and is in agreement with previous reports, is proposed.",

author = "Sheffer Meltzer and Daniel Mandler",

year = "1995",

doi = "10.1039/FT9959101019",

language = "American English",

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journal = "Physical Chemistry Chemical Physics",

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AU - Meltzer, Sheffer

AU - Mandler, Daniel

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AB - The etching of silicon has been studied by the scanning electrochemical microscope (SECM) technique. Etching has been accomplished in acidic fluoride solutions by electrogenerating a strong oxidant, i.e. bromine in this case, at an ultramicroelectrode which was held closely above a silicon 〈111〉 wafer. The parameters that affect the process and control the efficiency of the silicon etching were examined. A detailed mechanism of the process, which was derived from the unique advantages of the SECM and is in agreement with previous reports, is proposed.

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DO - 10.1039/FT9959101019

M3 - Article

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VL - 91

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EP - 1024

JO - Physical Chemistry Chemical Physics

JF - Physical Chemistry Chemical Physics

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ER -

Study of silicon etching in HBr solutions using a scanning electrochemical microscope

Abstract

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