TY - JOUR
T1 - Study of silicon etching in HBr solutions using a scanning electrochemical microscope
AU - Meltzer, Sheffer
AU - Mandler, Daniel
PY - 1995
Y1 - 1995
N2 - The etching of silicon has been studied by the scanning electrochemical microscope (SECM) technique. Etching has been accomplished in acidic fluoride solutions by electrogenerating a strong oxidant, i.e. bromine in this case, at an ultramicroelectrode which was held closely above a silicon 〈111〉 wafer. The parameters that affect the process and control the efficiency of the silicon etching were examined. A detailed mechanism of the process, which was derived from the unique advantages of the SECM and is in agreement with previous reports, is proposed.
AB - The etching of silicon has been studied by the scanning electrochemical microscope (SECM) technique. Etching has been accomplished in acidic fluoride solutions by electrogenerating a strong oxidant, i.e. bromine in this case, at an ultramicroelectrode which was held closely above a silicon 〈111〉 wafer. The parameters that affect the process and control the efficiency of the silicon etching were examined. A detailed mechanism of the process, which was derived from the unique advantages of the SECM and is in agreement with previous reports, is proposed.
UR - http://www.scopus.com/inward/record.url?scp=37049089120&partnerID=8YFLogxK
U2 - 10.1039/FT9959101019
DO - 10.1039/FT9959101019
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AN - SCOPUS:37049089120
SN - 0956-5000
VL - 91
SP - 1019
EP - 1024
JO - Physical Chemistry Chemical Physics
JF - Physical Chemistry Chemical Physics
IS - 6
ER -