Abstract
The etching of silicon has been studied by the scanning electrochemical microscope (SECM) technique. Etching has been accomplished in acidic fluoride solutions by electrogenerating a strong oxidant, i.e. bromine in this case, at an ultramicroelectrode which was held closely above a silicon 〈111〉 wafer. The parameters that affect the process and control the efficiency of the silicon etching were examined. A detailed mechanism of the process, which was derived from the unique advantages of the SECM and is in agreement with previous reports, is proposed.
Original language | American English |
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Pages (from-to) | 1019-1024 |
Number of pages | 6 |
Journal | Physical Chemistry Chemical Physics |
Volume | 91 |
Issue number | 6 |
DOIs | |
State | Published - 1995 |