Study of trapping levels in doped HgI2 radiation detectors

H. Hermon*, M. Schieber, M. Roth

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

The transient charge technique, TCT, was used to measure the trapping levels of pure and doped HgI2 detectors over the temperature range of 170-300 K. The dopants were excess of Hg and I2, naphthalene, butane, heavy paraffins, polyethylene and polyethylene glycol. The charge carriers were induced by a particles as well as by a UV nitrogen (337 nm) pulsed laser beam. The TCT determined trapping levels are compared with levels reported in literature from other solid state measurements.

Original languageEnglish
Pages (from-to)10-13
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume380
Issue number1-2
DOIs
StatePublished - 1 Oct 1996

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