TY - JOUR
T1 - Study of trapping levels in doped HgI2 radiation detectors
AU - Hermon, H.
AU - Schieber, M.
AU - Roth, M.
PY - 1996/10/1
Y1 - 1996/10/1
N2 - The transient charge technique, TCT, was used to measure the trapping levels of pure and doped HgI2 detectors over the temperature range of 170-300 K. The dopants were excess of Hg and I2, naphthalene, butane, heavy paraffins, polyethylene and polyethylene glycol. The charge carriers were induced by a particles as well as by a UV nitrogen (337 nm) pulsed laser beam. The TCT determined trapping levels are compared with levels reported in literature from other solid state measurements.
AB - The transient charge technique, TCT, was used to measure the trapping levels of pure and doped HgI2 detectors over the temperature range of 170-300 K. The dopants were excess of Hg and I2, naphthalene, butane, heavy paraffins, polyethylene and polyethylene glycol. The charge carriers were induced by a particles as well as by a UV nitrogen (337 nm) pulsed laser beam. The TCT determined trapping levels are compared with levels reported in literature from other solid state measurements.
UR - http://www.scopus.com/inward/record.url?scp=0030260142&partnerID=8YFLogxK
U2 - 10.1016/S0168-9002(96)00289-6
DO - 10.1016/S0168-9002(96)00289-6
M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???
AN - SCOPUS:0030260142
SN - 0168-9002
VL - 380
SP - 10
EP - 13
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
IS - 1-2
ER -