Study of trapping levels in doped HgI2 radiation detectors

H. Hermon; M. Schieber; M. Roth

doi:10.1016/S0168-9002(96)00289-6

Study of trapping levels in doped HgI₂ radiation detectors

H. Hermon^*
, M. Schieber
, M. Roth

^*Corresponding author for this work

The Institute of Applied Physics

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The transient charge technique, TCT, was used to measure the trapping levels of pure and doped HgI₂ detectors over the temperature range of 170-300 K. The dopants were excess of Hg and I₂, naphthalene, butane, heavy paraffins, polyethylene and polyethylene glycol. The charge carriers were induced by a particles as well as by a UV nitrogen (337 nm) pulsed laser beam. The TCT determined trapping levels are compared with levels reported in literature from other solid state measurements.

Original language	English
Pages (from-to)	10-13
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	380
Issue number	1-2
DOIs	https://doi.org/10.1016/S0168-9002(96)00289-6
State	Published - 1 Oct 1996

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AB - The transient charge technique, TCT, was used to measure the trapping levels of pure and doped HgI2 detectors over the temperature range of 170-300 K. The dopants were excess of Hg and I2, naphthalene, butane, heavy paraffins, polyethylene and polyethylene glycol. The charge carriers were induced by a particles as well as by a UV nitrogen (337 nm) pulsed laser beam. The TCT determined trapping levels are compared with levels reported in literature from other solid state measurements.

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Study of trapping levels in doped HgI₂ radiation detectors

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