Subband structure and kinetic characteristics of thin films of gapless semiconductors

L. D. Shvartsman

doi:10.1016/0038-1098(83)90002-9

Subband structure and kinetic characteristics of thin films of gapless semiconductors

L. D. Shvartsman^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The subband structure and effective masses values in quantum-sized film of gapless semiconductors are calculated. Isoenergy surfaces corrugation is taken into account. The results are shown to differ strongly from those got in spherical approximation. The complex subband structure results in a number of peculiarities of kinetic characteristics. Formally one-valley monopolar semiconductor film may behave either like a many-valley on like a bipolar semiconductor.

Original language	English
Pages (from-to)	787-790
Number of pages	4
Journal	Solid State Communications
Volume	46
Issue number	11
DOIs	https://doi.org/10.1016/0038-1098(83)90002-9
State	Published - Jun 1983
Externally published	Yes

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title = "Subband structure and kinetic characteristics of thin films of gapless semiconductors",

abstract = "The subband structure and effective masses values in quantum-sized film of gapless semiconductors are calculated. Isoenergy surfaces corrugation is taken into account. The results are shown to differ strongly from those got in spherical approximation. The complex subband structure results in a number of peculiarities of kinetic characteristics. Formally one-valley monopolar semiconductor film may behave either like a many-valley on like a bipolar semiconductor.",

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AB - The subband structure and effective masses values in quantum-sized film of gapless semiconductors are calculated. Isoenergy surfaces corrugation is taken into account. The results are shown to differ strongly from those got in spherical approximation. The complex subband structure results in a number of peculiarities of kinetic characteristics. Formally one-valley monopolar semiconductor film may behave either like a many-valley on like a bipolar semiconductor.

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Subband structure and kinetic characteristics of thin films of gapless semiconductors

Abstract

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