Subband structure and kinetic characteristics of thin films of gapless semiconductors

L. D. Shvartsman*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The subband structure and effective masses values in quantum-sized film of gapless semiconductors are calculated. Isoenergy surfaces corrugation is taken into account. The results are shown to differ strongly from those got in spherical approximation. The complex subband structure results in a number of peculiarities of kinetic characteristics. Formally one-valley monopolar semiconductor film may behave either like a many-valley on like a bipolar semiconductor.

Original languageAmerican English
Pages (from-to)787-790
Number of pages4
JournalSolid State Communications
Volume46
Issue number11
DOIs
StatePublished - Jun 1983
Externally publishedYes

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