Substrate Hot-Electron Injection EPROM

A new EPROM approach using substrate hot-electror injection is introduced. Electron injection into the substrate is achieved, using positive voltages only, to facilitate the integration of the techn que into a memory array. High-injection efficiency of electrons to the floating gate is achieved, enabling 5-V only operation, where the high voltages are generated on chip. Programming speed of 1-V/ms for total collection of 10 μa per bit line is realized. The main disadvantage s of this EPROM approach are circuit complexity and cell size.