TY - JOUR
T1 - Superconducting diode effect in Ising superconductors
AU - Bankier, Itai
AU - Attias, Lotan
AU - Levchenko, Alex
AU - Khodas, Maxim
N1 - Publisher Copyright:
© 2025 American Physical Society.
PY - 2025/5/1
Y1 - 2025/5/1
N2 - We study the superconducting diode effect (SDE) in an Ising superconductor with broken basal mirror symmetry in a parallel magnetic field. We show that in the presence of a small Rashba spin splitting, ΔR, the dominant Ising spin-orbit coupling (ΔI≫ΔR) dramatically enhances the SDE efficiency compared to a Rashba superconductor with ΔI=0 and the same ΔR. The suppression of the SDE for ΔI=0 at ΔR much larger than the critical temperature (Tc) is accidental. At ΔR≪Tc, the SDE efficiency is small because, to linear order, ΔR can be removed by a gauge transformation. These two factors - the accidental suppression of the SDE at large ΔR and the systematic suppression at small ΔR - are eliminated by Ising spin-orbit coupling. As a result, SDE efficiency is substantially enhanced for ΔI≫ΔR≠0.
AB - We study the superconducting diode effect (SDE) in an Ising superconductor with broken basal mirror symmetry in a parallel magnetic field. We show that in the presence of a small Rashba spin splitting, ΔR, the dominant Ising spin-orbit coupling (ΔI≫ΔR) dramatically enhances the SDE efficiency compared to a Rashba superconductor with ΔI=0 and the same ΔR. The suppression of the SDE for ΔI=0 at ΔR much larger than the critical temperature (Tc) is accidental. At ΔR≪Tc, the SDE efficiency is small because, to linear order, ΔR can be removed by a gauge transformation. These two factors - the accidental suppression of the SDE at large ΔR and the systematic suppression at small ΔR - are eliminated by Ising spin-orbit coupling. As a result, SDE efficiency is substantially enhanced for ΔI≫ΔR≠0.
UR - http://www.scopus.com/inward/record.url?scp=105005143966&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.111.L180505
DO - 10.1103/PhysRevB.111.L180505
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AN - SCOPUS:105005143966
SN - 2469-9950
VL - 111
JO - Physical Review B
JF - Physical Review B
IS - 18
M1 - L180505
ER -