Abstract
We study the low-temperature transport properties of amorphous indium oxide films as a function of disorder near the metal-insulator transition. Deep in the insulating regime, the conductivity shows simple variable-range hopping that turns into an Arrhenius activation as the transition is approached. With further decrease in static disorder, superconductivity sets in and the transition temperature increases towards a value of 3.3 K. The transition between a superconducting phase and an insulating one is also accompanied by a sign and anisotropy change in the magnetoresistance of the films. These results are discussed in light of recent theories.
Original language | English |
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Pages (from-to) | 10917-10922 |
Number of pages | 6 |
Journal | Physical Review B |
Volume | 46 |
Issue number | 17 |
DOIs | |
State | Published - 1992 |