Surface breakdown phenomena in germanium under high transverse fields

A. Many; Y. Goldstein

doi:10.1016/0039-6028(64)90049-4

Surface breakdown phenomena in germanium under high transverse fields

A. Many^*, Y. Goldstein

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Transient field-effect measurements under large-amplitude voltage pulses are used to study the high-field behaviour of germanium surfaces. Breakdown phenomena are observed when the field at the surface exceeds about 10⁴ V/cm. It is shown that these phenomena arise from quantum mechanical tunnelling between slow surface states and the semiconductor bulk. The slow states involved lie ∼ 0.03 eV below the conduction-band edge in n-type samples and ∼ 0.025 eV above the valence-band edge in p-type.

Original language	English
Pages (from-to)	114-119
Number of pages	6
Journal	Surface Science
Volume	2
Issue number	C
DOIs	https://doi.org/10.1016/0039-6028(64)90049-4
State	Published - 1964

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title = "Surface breakdown phenomena in germanium under high transverse fields",

abstract = "Transient field-effect measurements under large-amplitude voltage pulses are used to study the high-field behaviour of germanium surfaces. Breakdown phenomena are observed when the field at the surface exceeds about 104 V/cm. It is shown that these phenomena arise from quantum mechanical tunnelling between slow surface states and the semiconductor bulk. The slow states involved lie ∼ 0.03 eV below the conduction-band edge in n-type samples and ∼ 0.025 eV above the valence-band edge in p-type.",

author = "A. Many and Y. Goldstein",

year = "1964",

doi = "10.1016/0039-6028(64)90049-4",

language = "אנגלית",

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AU - Many, A.

AU - Goldstein, Y.

PY - 1964

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N2 - Transient field-effect measurements under large-amplitude voltage pulses are used to study the high-field behaviour of germanium surfaces. Breakdown phenomena are observed when the field at the surface exceeds about 104 V/cm. It is shown that these phenomena arise from quantum mechanical tunnelling between slow surface states and the semiconductor bulk. The slow states involved lie ∼ 0.03 eV below the conduction-band edge in n-type samples and ∼ 0.025 eV above the valence-band edge in p-type.

AB - Transient field-effect measurements under large-amplitude voltage pulses are used to study the high-field behaviour of germanium surfaces. Breakdown phenomena are observed when the field at the surface exceeds about 104 V/cm. It is shown that these phenomena arise from quantum mechanical tunnelling between slow surface states and the semiconductor bulk. The slow states involved lie ∼ 0.03 eV below the conduction-band edge in n-type samples and ∼ 0.025 eV above the valence-band edge in p-type.

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AN - SCOPUS:50549192466

SN - 0039-6028

VL - 2

SP - 114

EP - 119

JO - Surface Science

JF - Surface Science

IS - C

ER -

Surface breakdown phenomena in germanium under high transverse fields

Abstract

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