Surface quantum wells in hydrogen implanted ZnO

V. Bogatu*, A. Goldenblum, A. Many, Y. Goldstein

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

Low energy hydrogen ion implantation in ZnO creates an accumulation layer near the surface, giving rise to a quantum well. The corresponding self-consistent Hartree problem is solved by taking into account the donor distribution resulting from the implantation process. The values of the surface potential as a function of repelled away electron concentration are derived. The resulting data are compared with experimental values obtained from space-charge capacitance measurements. A comparative study between the semi-classical and self-consistent quantum treatments is presented.

Original languageEnglish
Pages (from-to)89-96
Number of pages8
JournalPhysica Status Solidi (B): Basic Research
Volume212
Issue number1
DOIs
StatePublished - Mar 1999

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