Abstract
Low energy hydrogen ion implantation in ZnO creates an accumulation layer near the surface, giving rise to a quantum well. The corresponding self-consistent Hartree problem is solved by taking into account the donor distribution resulting from the implantation process. The values of the surface potential as a function of repelled away electron concentration are derived. The resulting data are compared with experimental values obtained from space-charge capacitance measurements. A comparative study between the semi-classical and self-consistent quantum treatments is presented.
Original language | English |
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Pages (from-to) | 89-96 |
Number of pages | 8 |
Journal | Physica Status Solidi (B): Basic Research |
Volume | 212 |
Issue number | 1 |
DOIs | |
State | Published - Mar 1999 |